Interfacial reactions between thin films of Zn and GaAs were studied by means of transmission electron microscopy. Low-temperature interaction is governed by the penetration of Zn into the native oxide layer at the metal/GaAs interface. At 360°C the formation of Zn_{3}As_{2} phase, highly oriented with respect to the (100) substrate takes place.
Very thin Au(Zn) contacts to p-GaAs were studied by means of transmission electron microscopy and secondary ion mass spectrometry. It was found that such contacts when cap annealed became ohmic, even though the reaction between the metallization and GaAs is confined to a very close vicinity of the interface.
We studied magnetoconductance of two different mesoscopic systems: microregions containing two-dimensional electron gas adjacent to a grain-boundary plane in bicrystals of Hg_{0.79}Cd_{0.19}Mn_{0.02}Te and photolithographically patterned microstructures of Pb_{1-x}Mn_{x}Se. In both systems universal conductance fluctuations and generation of the second-harmonic voltage were observed at T ≤ 1 K. Moreover, in the former system the second harmonic signal exhibited distinct rise when the sample was cooled below the spin-glass freezing temperature (100 mK).
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