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Structure and Stress in Au/Cu Two-Layer System during Annealing at Different Temperature

100%

Chocyk D.

Acta Physica Polonica A

2016

vol. 130

issue 4

1118-1120

In this work, the Au/Cu two-layer systems, with the total thickness equal to 30 nm are studied. The two-layer systems were deposited by thermal evaporation in a UHV system on the silicon substrate at room temperature. After deposition the samples were annealed. We examined samples subjected to thermal cycle with the different maximum temperature. The X-ray diffraction and X-ray reflectometry are performed for systems before and after annealing. It was found that during the cycle of annealing above 150°C starts process of penetration of the Au layer by Cu atoms results in alloying. In Au/Cu systems, the final layer is the ordered Au/Cu₃ phase.

The Effect of Ho Doping Contents on the Structural, Microstructure and Dielectric Properties of Bi5Ti3FeO15 Aurivillius Ceramics

37%

Tomaszewska M., Dzik J., Wodecka-Duś B., Pikula T., Adamczyk-Habrajska M., Szalbot D., Chocyk D., Tomaszewska M., Dzik J., Wodecka-Duś B., Pikula T., Adamczyk-Habrajska M., Szalbot D., Chocyk D.

Archives of Metallurgy and Materials

2021

vol. 66

issue 1

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1 Acta Physica Polonica A

1 Archives of Metallurgy and Materials

1 2021

1 2016

2 Chocyk D.

1 Adamczyk-Habrajska M.

1 Dzik J.

1 Pikula T.

1 Szalbot D.

1 Tomaszewska M.

1 Wodecka-Duś B.

Search results

Structure and Stress in Au/Cu Two-Layer System during Annealing at Different Temperature

The Effect of Ho Doping Contents on the Structural, Microstructure and Dielectric Properties of Bi5Ti3FeO15 Aurivillius Ceramics