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1
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Positron Annihilation Studies of Czochralski-Grown Silicon Annealed Under Pressure

100%
Karwasz G., Brusa R., Misiuk A., Zecca A.
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vol. 95
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issue 4
575-580
EN
Two positron techniques have been applied to study dynamics of oxygen precipitation in Czochralski-grown silicon, annealed under high (up to 1.4 GPa) pressure. Lifetime measurements were performed with 180 ps resolution; Doppler broadening with a variable-energy slow-positron beam. Different thermal treatings rise the mean lifetime of positrons from 222 ps in as-grown samples up to 227 ps. In samples with a high (up to 85%) amount of oxygen precipitated, an intermediate (550-800 ps) lifetime is observed.
2
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First-Principles Calculation of He-H Interaction in c-Si

100%
Gnidenko A., Zavodinsky V., Misiuk A., Bak-Misiuk J.
Acta Physica Polonica A
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2006
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vol. 109
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issue 3
353-357
EN
We used the density functional theory and ab initio pseudopotentials to investigate He-H interaction in crystalline silicon. It was shown that both hydrogen and helium stimulate the formation of vacancy complexes. The presence of hydrogen decreases the vacancy and divacancy formation energies by about 2 eV. The presence of one or two helium atoms reduces the divacancy formation energy by 0.3 and 0.4 eV, respectively. The influence of helium presence on hydrogen diffusion from silicon vacancies under high pressure depends on a helium concentration. Thus, according to our calculation, low concentrations of He increase the hydrogen out-diffusion.
3
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Influence of Preannealing on Perfection of Czochralski Grown Silicon Crystals Subjected to High Pressure Treatment

88%
Datsenko L. I., Misiuk A., Härtwig J., Briginets A., Khrupa V. I.
Acta Physica Polonica A
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1994
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vol. 86
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issue 4
585-590
EN
The effect of high temperature (up to 1120°C)-high pressure (up to 1.1 GPa) treatment on the resulting defect structure of preannealed (450-725°C, up to 96 hours) Czochralski grown Si crystals was studied by X-ray diffraction. The values of the Debye-Waller static factor and of the root-mean-square atomic displacement due to defects were determined for various Lane reflections. Well-defined development of the cluster like defect structure after high temperature pressurization depending to a substantial extent on the preannealing conditions was observed.
4
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Effect of Hydrostatic Pressure on Photoluminescence Spectra from Structures with Si Nanocrystals Fabricated in SiO_2 Matrix

76%
Zhuravlev K., Tyschenko I., Vandyshev E., Bulytova N., Misiuk A., Rebohle L., Skorupa W.
Acta Physica Polonica A
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2002
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vol. 102
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issue 2
337-344
EN
The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO_2 films was studied. A "blue"-shift of PL spectrum from the SiO_2 films implanted with Si^+ ions to total dose of 1.2×10^{17} cm^{-2} with an increase in hydrostatic pressure was observed. For the films implanted with Si^+ ions to a total dose of 4.8×10^{16} cm^{-2} high temperature annealing under high hydrostatic pressure (12 kbar) causes a "red"-shift of photoluminescence spectrum. The "red" photoluminescence bands are attributed to Si nanocrystals while the "blue" ones are related to Si nanocrystals of reduced size or chains of silicon atoms or ≡Si-Si≡ defects. A decrease in size of Si nanocluster size occurs in result of the pressure-induced decrease in the diffusion of silicon atoms.
5
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Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal

76%
Misiuk A., Adamczewska J., Bąk-Misiuk J., Härtwig J., Morawski A., Witczak Z.
Acta Physica Polonica A
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1991
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vol. 80
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issue 3
317-320
EN
The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.
6
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Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs

76%
Bak-Misiuk J., Dynowska E., Romanowski P., Misiuk A., Sadowski J., Caliebe W.
Acta Physica Polonica A
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2012
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vol. 121
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issue 4
903-905
EN
Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500°C under ambient and enhanced hydrostatic pressure (1.1 GPa), of Ga_{1-x}Mn_xAs/GaAs layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230°C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs
7
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X-ray Synchrotron Studies of Nanostructure Formation in High Temperature - Pressure Treated Silicon Implanted with Hydrogen

76%
Wieteska K., Wierzchowski W., Graeff W., Misiuk A., Barcz A., Bryja L., Popov V.
Acta Physica Polonica A
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2002
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vol. 102
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issue 2
239-244
EN
The effects of various high temperature-pressure treatments in Czochralski grown silicon (Cz-Si) implanted with 130 keV hydrogen to the dose of 4times10^{16} cm^{-2} were investigated using synchrotron X-ray topographic methods and rocking curve measurements. The high temperature- pressure processes included 10 h annealing at 450°C, 650°C, and 725°C at argon pressure 12 kbar and 1 bar. The topographic investigations were performed with projection and section methods in back-reflection and transmission geometry. It was found that annealing resulted in significantly reduced strain induced by the implantation, which became undetectable with presently used very sensitive synchrotron arrangement. A significant difference between the Cz-Si:H samples annealed at high and atmospheric pressure was observed. In the first case a distinct topographic contrast attributed to the formation of comparatively larger inclusions was observed. This effect was different at different temperatures. The samples annealed at enhanced pressure were more uniform and often produced significant interference effects.
8
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Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure

76%
Bąk-Misiuk J., Domagała J., Trela J., Leszczyński M., Misiuk A., Hartwig J., Prieur E.
Acta Physica Polonica A
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1996
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vol. 89
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issue 3
405-409
EN
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
9
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Changes of GaP: N Defect Structure under Hydrostatic Pressure

76%
Bąk-Misiuk J., Domagała J., Kozankiewicz B., Misiuk A., Adamczewska J., Skibska M.
Acta Physica Polonica A
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1993
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vol. 83
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issue 1
87-93
EN
The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c_{N}, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c_{N} > 10^{20} at. cm^{-3}. The model explaining the hydrostatic pressure induced defect structure changes is proposed.
10
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Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure

76%
Misiuk A., Bąk-Misiuk J., Bryja L., Kątcki J., Ratajczak J., Jun J., Surma B.
Acta Physica Polonica A
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2002
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vol. 101
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issue 5
719-727
EN
Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O^+ dose, D, within the 6×10^{17}-2×10^{18} cm^{-2} range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10^{17} cm^{-2}). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
11
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Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry

76%
Misiuk A., Härtwig J., Prieur E., Ohler M., Bąk-Misiuk J., Domagała J., Surma B.
Acta Physica Polonica A
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1997
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vol. 91
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issue 5
987-991
EN
The defect structure of Czochralski grown silicon single crystals annealed at 870-1400 K under hydrostatic pressure up to 1 GPa was investigated by conventional and synchrotron radiation X-ray topography and by reciprocal space mapping. Hydrostatic pressure promotes oxygen precipitation from oversaturated Si-O solid solution and the creation of structural defects.
12
Content available remote

Structural Perfection of Czochralski Grown Silicon Crystals Annealed above 1500 K under Hydrostatic Pressure

76%
Datsenko L., Khrupa V., Krasulya S., Misiuk A., Härtwig J., Surma B.
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EN
The structural perfection of Czochralski grown silicon crystals annealed at 1580-1620 K under hydrostatic pressure up to 10^{9} Pa was investigated by X-ray diffractometry and topography supplemented by the method of absorption of infrared rays. Such treatment suppresses dissolution of oxygen-related defects. From the static Debye-Waller factor dependence on the reflection order it was concluded that large clusters or dislocation loops are the dominant type of defects for most of the samples.
13
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Composition and Structure of Czochralski Silicon Implanted with H_{2}^{+} and Annealed under Enhanced Hydrostatic Pressure

76%
Kulik M., Kobzev A., Misiuk A., Wierzchowski W., Wieteska K., Bak-Misiuk J.
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issue 2
332-335
EN
Depth distribution of implanted species and microstructure of oxygen-containing Czochralski grown silicon (Cz-Si) implanted with light ions (such as H^{+}) are strongly influenced by hydrostatic pressure applied during the post-implantation treatment. Composition and structure of Si:H prepared by implantation of Cz-Si with H_{2}^{+}; fluence D = 1.7 × 10^{17} cm^{-2}, energy E = 50 keV (projected range of H_{2}^{+}, R_{p}(H) = 275 nm), processed at up to 923 K under Ar pressure up to 1.2 GPa for up to 10 h, were investigated by elastic recoil detection Rutherford backscattering methods and the depths distributions of implanted hydrogen and also carbon, oxygen and silicon in the near surface were determined for all samples. The defect structure of Si:H was also investigated by synchrotron diffraction topography at HASYLAB (Germany). High sensitivity to strain associated with small inclusions and dislocation loops was provided by monochromatic (λ = 0.1115 nm) beam topography. High resolution X-ray diffraction was also used.
14
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Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure

64%
Misiuk A., Wierzchowski W., Wieteska K., Londos C., Andrianakis A., Bak-Misiuk J., Yang D., Surma B.
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issue 2
344-347
EN
Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × 10^{14} cm^{-3} (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.
15
Content available remote

Properties of Si:V Annealed under Enhanced Hydrostatic Pressure

64%
Misiuk A., Wierzchowski W., Wieteska K., Barcz A., Bak-Misiuk J., Chow L., Vanfleet R., Prujszczyk M.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
196-199
EN
It is known that processing of silicon implanted with vanadium, Si:V, at high temperature-pressure, HT-HP, can lead to magnetic ordering within the V-enriched area. New data concerning structure of Si:V (prepared using V^{+} doses, D = (1-5) × 10^{15} cm^{-2}, and energy, E = 200 keV), as implanted and processed for up to 10 h at HT ≤ 1400 K under enhanced hydrostatic pressure, HP ≤ 1.1 GPa, are presented. In effect of implantation, amorphous (a-Si) area is produced near range of implanted species. Transmission electron microscopy, secondary ion mass spectrometry, X-ray, and synchrotron methods were used for sample characterisation. At HT-HP the a-Si layer is subjected to solid phase epitaxial re-growth. Depending on HP, distinct solid phase epitaxial re-growth and formation of VSi_2 are observed at HT ≥ 720 K. HP applied at processing results in the improved solid phase epitaxial re-growth in Si:V. This can be related, among others, to the effect of HP on diffusivity of V^{+} and of implantation-induced point defects. Our results can be useful for development of the new family of diluted magnetic semiconductors.
16
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X-ray Study of Strain Relaxation in Heteroepitaxial AlGaAs Layers Annealed under High Hydrostatic Pressure

64%
Bąk-Misiuk J., Adamczewska J., Misiuk A., Regiński K., Wierzchowski W., Wieteska K., Kozanecki A., Kuritsyn D., Glukhanyuk W., Trela J.
Acta Physica Polonica A
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2002
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vol. 101
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issue 5
689-699
EN
The effect of treatment at up to 1270 K under hydrostatic argon pressure, up to 1.2 GPa, on strain relaxation of AlGaAs layers was investigated by X-ray diffraction and related methods. The 1.5μm thick AlGaAs layers were grown by molecular beam epitaxy method on 001 oriented semi-insulating GaAs substrate at 950 K. An increase in intensity of X-ray diffuse scattering, originating from hydrostatic pressure-induced misfit dislocations, was observed for all treated samples. For the samples treated at 920 K during 1 h under 0.6 GPa, the diffuse scattering was confined to the [110] crystallographic direction perpendicular to the direction of dislocations. For the samples treated at 1.2 GPa at the same temperature and time conditions as for 0.6G Pa, a different behaviour is observed, namely the diffuse scattering extends along all azimuthal directions, indicating that dislocations are created in both [110] and [¯110] directions. The change of strain after the treatment was most pronounced for the samples treated at 1.2 GPa for 1 h at 920 K.
17
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Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment

52%
Wieteska K., Misiuk A., Prujszczyk M., Wierzchowski W., Surma B., Bąk-Misiuk J., Romanowski P., Shalimov A., Capan I., Yang D., Graeff W.
Acta Physica Polonica A
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2008
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vol. 114
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issue 2
439-446
EN
Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content (c_O) up to 1.1×10^{18} cm^{-3}, admixed with N or Ge (Si-N, c_N ≤ 1.2×10^{15} cm^{-3}, or Si-Ge, c_{Ge} ≈ 7×10^{17} cm^{-3}, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.
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