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Study of Ti, V and Their Oxides-Based Thin Films in the Search for Hydrogen Storage Materials

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Tarnawski Z., Zakrzewska K., Kim-Ngan N.-T., Krupska M., Sowa S., Drogowska K., Havela L., Balogh A.

Acta Physica Polonica A

2015

vol. 128

issue 3

431-439

Thin film series consisting of Ti, V, TiO₂ and V₂O₅ layer with different layer geometries, sequences and thicknesses have been prepared by the sputtering technique. The hydrogen depth profile of selected films upon hydrogen charging at 1 bar and/or hydrogenation at pressure up to 102 bar was determined by using secondary ion mass spectrometry and nuclear reaction analysis using a N-15 beam. The highest hydrogen storage with a concentration up to 50 at.% was found in the pure Ti and Ti-contained layer, while it amounts to around 30% in the metallic Ti-V-Ni layer. Hydrogen can diffuse through the TiO₂ layer without accumulation, but can be stored in the VO₂ layer in some cases. Hydrogen can remove the preferential Ti orientation in the films and induce a complete transition of V₂O₅ into VO₂ in the films.

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1 Acta Physica Polonica A

1 2015

1 Balogh A.

1 Drogowska K.

1 Havela L.

1 Kim-Ngan N.-T.

1 Krupska M.

1 Sowa S.

1 Tarnawski Z.

1 Zakrzewska K.

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Study of Ti, V and Their Oxides-Based Thin Films in the Search for Hydrogen Storage Materials