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Enhanced Exciton-Phonon Interaction in Strained ZnCdSe/ZnSe Quantum Well Structures

100%

Godlewski M., Leonardi K., Hommel D.

Acta Physica Polonica A

1997

vol. 92

issue 4

769-773

Radiative recombination processes in pseudomorphic ZnCdSe/ZnSe structures are compared to those observed in strain-relaxed structures grown on GaAs substrates with thick ZnSe buffer layers. From the temperature dependence of the photoluminescence line width we evaluate the strength of exciton-phonon interaction with acoustic (dominant at lower temperatures) and optical phonons. Stronger exciton-phonon interaction is observed for pseudomorphic structures. Such enhanced exciton-phonon interaction is likely responsible for a faster photoluminescence deactivation at increased temperatures. We also report different exciton properties (photoluminescence intensity, width, strength of exciton-phonon interaction) in quantum well of a given width but in structures grown with different order of quantum wells. More stable photoluminescence (with increasing temperature) is observed for a given quantum well if it is closer to the buffer layer and not to the cap layer.

Comparison of Exciton Properties in Quantum Well Structures of ZnCdSe/ZnSe and ZnSe/ZnMgSSe

76%

Godlewski M., Ivanov V., Bergman J., Monemar B., Leonardi K., Behringer M., Hommel D.

Acta Physica Polonica A

1998

vol. 94

issue 2

313-316

Properties of excitons in quantum well structures of ZnCdSe/ZnSe and ZnSe/ZnMgSSe are compared. In ternary ZnCdSe quantum wells and at low temperature excitons are strongly localised. Weaker localization is observed in quantum well structures of ZnSe/ZnMgSSe. Present studies suggest formation of negatively charged excitons in the latter structures.

Microwave-Induced Delocalization of Excitons in Ternary Compounds of II-VI and III-V Semiconductors

52%

Ivanov V., Godlewski M., Khachapuridze A., Yatsunenko S., Wojtowicz T., Karczewski G., Bergman J., Monemar B., Shamirzaev T., Zhuravlev K., Leonardi K., Hommel D.

Acta Physica Polonica A

2003

vol. 103

issue 6

559-566

In this work we employ technique of optically detected cyclotron resonance for evaluation of the role of localization processes in CdTe/CdMnTe and CdMnTe/CdMgTe quantum well structures. From microwave-induced changes of excitonic emissions we evaluate magnitude of potential fluctuations (Stokes shift), correlate optically detected cyclotron resonance results with the results of time-resolved experiments and discuss nature of recombination processes in the limit of a strong localization.

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3 Acta Physica Polonica A

1 2003

1 1998

1 1997

3 Godlewski M.

3 Hommel D.

3 Leonardi K.

2 Bergman J.

2 Ivanov V.

2 Monemar B.

1 Behringer M.

1 Karczewski G.

1 Khachapuridze A.

1 Shamirzaev T.

1 Wojtowicz T.

1 Yatsunenko S.

1 Zhuravlev K.

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Enhanced Exciton-Phonon Interaction in Strained ZnCdSe/ZnSe Quantum Well Structures

Comparison of Exciton Properties in Quantum Well Structures of ZnCdSe/ZnSe and ZnSe/ZnMgSSe

Microwave-Induced Delocalization of Excitons in Ternary Compounds of II-VI and III-V Semiconductors