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Quantum Magnetotransport in InGaAs/InP at High Magnetic Fields and Low Temperatures

100%

Kovacs G., Novikov V., Gombos G., Podor B., Remenyi G.

Acta Physica Polonica A

1995

vol. 87

issue 2

473-476

Quantum Hall effect and Shubnikov-de Haas effect measurements were made in two-dimensional electron gas in liquid phase epitaxially grown Ga_{0.47}In_{0.53}As/InP heterostructures in high magnetic fields in the temperature range from 4.2 K down to 60 mK. Two-dimensional electron gas concentrations and mobilities were in the range of (1 - 3) × 10^{11} cm^{-2} and (1 - 3) × 10^{4} cm^{2}/(V s), respectively. Corresponding to this the i = 1 quantum Hall effect plateau occurred at about 6 T magnetic field. Although fractional occupation numbers of about 0.3 were reached, no signs of fractional quantization were detected. Both current and frequency breakdown of the quantum Hall effect were investigated. Narrowing of the plateaus with increasing current differs from that measured in GaAs/AlGaAs structures because of the different mechanisms of dissipation. The fact that the magnetic length becomes smaller than the characteristic scale of the disorder seems to be essential in understanding the low frequency breakdown via the presence of quasi-classical electron states.

Crystallization in InGaAs/InP Heterostructures with a Strong Disorder

86%

Kovács G., Remenyi G., Gombos G., Savel'ev I. G., Kreshchuk A. M., Hegman N., Pödör B.

Acta Physica Polonica A

1995

vol. 88

issue 4

783-786

Non-linear current-voltage characteristics were observed in the range of filling factors of 0.3 ≤ v ≤ 0.4 in a two-dimensional electron system in InGaAs/InP heterostructures with a strong disorder. The observations are explained qualitatively in terms of magnetic field induced localization and Wigner solidification.

Activated Transport in Magnetic-Field Induced Insulating Phase in Two-Dimensional Electron Gas in InGaAs/InP Heterostructures

86%

Pődör B., Gombos G., Reményi G., Kovács G., Savel'ev I. G., Novikov S. V.

Acta Physica Polonica A

1997

vol. 92

issue 5

945-949

We report on experiments on low temperature (millikelvin range) activated magnetotransport on low-density two-dimensional electron systems in InGaAs/InP for Landau level filling factors 0.25 ≤ ν ≤ 0.55. The activation energy increases approximately linearly with decreasing filling factor. The observations are discussed in the light of the formation of the Wigner solid.

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3 Acta Physica Polonica A

1 1997

2 1995

3 Gombos G.

2 Kovács G.

2 Remenyi G.

2 Savel'ev I. G.

1 Hegman N.

1 Kovacs G.

1 Kreshchuk A. M.

1 Novikov S. V.

1 Novikov V.

1 Podor B.

1 Pödör B.

1 Pődör B.

1 Reményi G.

Search results

Quantum Magnetotransport in InGaAs/InP at High Magnetic Fields and Low Temperatures

Crystallization in InGaAs/InP Heterostructures with a Strong Disorder

Activated Transport in Magnetic-Field Induced Insulating Phase in Two-Dimensional Electron Gas in InGaAs/InP Heterostructures