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Detection of Shallow Dislocations on 4H-SiC Substrate by Etching Method

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Ishikawa Y., Yao Y., Sato K., Sugawara Y., Danno K., Suzuki H., Bessho T., Kawai Y., Shibata N.

Acta Physica Polonica A

2011

vol. 120

issue 6A

A-25-A-27

Correlation between dislocation types in epitaxial 4H-SiC and etch pit types on the 4H-SiC wafer surface were investigated by etch pit method and transmission electron microscope. Shallow dislocation on the wafer was found to form round pit without core. The shallow dislocation was estimated half-loop type in wafer and this estimation explains that step-flow growth converts half-loop dislocation into complex dislocation composed by threading dislocation and basal plane dislocation.

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1 Acta Physica Polonica A

1 2011

1 Bessho T.

1 Danno K.

1 Ishikawa Y.

1 Kawai Y.

1 Sato K.

1 Shibata N.

1 Sugawara Y.

1 Suzuki H.

1 Yao Y.

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Detection of Shallow Dislocations on 4H-SiC Substrate by Etching Method