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Recrystallization of Amorphous Layer in Ion Implanted GaAs - Transmission Electron Microscopy Studies

100%

Jasiński J., Liliental-Weber Z.

Acta Physica Polonica A

1996

vol. 90

issue 4

825-828

2 MeV arsenic or gallium ions were used to produce nonstoichiometric buried amorphous layers in gallium arsenide. The mechanism of thermally induced regrowth of these layers was investigated using transmission electron microscopy. Low-temperature annealing resulted in nucleation of high densities of stacking faults. This was associated with the local nonstoichiometry of the amorphous layers. After annealing at high temperatures, in arsenic as well as in gallium implanted samples, two layers of voids, formed in result of vacancies clustering, were found in areas adjacent to the initial location of the amorphous-crystalline interfaces. A qualitative model of the formation of such layers was proposed.

Role of Arsenic Antisite Defect in Nonstoichiometric Gallium Arsenide

52%

Jasiński J., Kurpiewski A., Korοna K., Kamińska M., Ρalczewska M., Krotkus A., Marcinkievicius S., Liliental-Weber Z., Tan H. H., Jagadish C.

Acta Physica Polonica A

1995

vol. 88

issue 4

747-750

Over the last few years there have been many studies of GaAs layers grown at low temperatures (180-300°C), so called LT GaAs. The interest in LT GaAs was motivated by the potential application of 600oC annealed LT GaAs in microwave and fast optoelectronic devices because of its short photocarrier lifetime, reasonable mobility and high resistivity. These properties are associated with the nonstoichiometry of LT GaAs. Recently, studies of comparable material, nonstoichiometric GaAs produced by arsenic ion implantation have been initiated. There is still a strong controversy as to whether the arsenic antisite (As_{Ga}) or arsenic precipitates are responsible for unique electrical properties of both materials. This paper presents the results of structural and electrical studies of high energy As implanted GaAs and comments on relationships between the structure and the resulting electrical properties.

Interaction of Au with GaSb and its Impact on the Formation of Ohmic Contacts

52%

Piotrowska A., Kamińska E., Piotrowski T., Kasjaniuk S., Guziewicz M., Gierlotka S., Lin X. W., Liliental-Weber Z., Washburn J., Kwiatkowski S.

Acta Physica Polonica A

1995

vol. 87

issue 2

419-422

Interfacial reactions between GaSb and Au were studied by Rutherford backscattering, X-ray diffraction, and cross-sectional transmission electron microscopy. Evaluation of the extent to which the GaSb substrate decomposes was of primary concern. The results give evidence that the reaction takes place even at temperatures as low as 180°C. High reactivity of gold towards GaSb revealed by this study demonstrates that Au-based metallization is not a good candidate for device quality ohmic contacts to GaSb-based devices.

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3 Acta Physica Polonica A

1 1996

2 1995

3 Liliental-Weber Z.

2 Jasiński J.

1 Gierlotka S.

1 Guziewicz M.

1 Jagadish C.

1 Kamińska E.

1 Kamińska M.

1 Kasjaniuk S.

1 Korοna K.

1 Krotkus A.

1 Kurpiewski A.

1 Kwiatkowski S.

1 Lin X. W.

1 Marcinkievicius S.

1 Piotrowska A.

1 Piotrowski T.

1 Tan H. H.

1 Washburn J.

1 Ρalczewska M.

Search results

Recrystallization of Amorphous Layer in Ion Implanted GaAs - Transmission Electron Microscopy Studies

Role of Arsenic Antisite Defect in Nonstoichiometric Gallium Arsenide

Interaction of Au with GaSb and its Impact on the Formation of Ohmic Contacts