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EN
The pure Ni and Ni-S ageing systems, thermally aged and also irradiated by 5 MeV electrons at 270 K with subsequent annealing, are studied by means of positron annihilation spectroscopy. The formation of ultrafine S-rich precipitates (clusters) is observed in Ni-S during thermal ageing at about 650 K. It is assumed that these clusters do not contain vacancy-type defects and they are coherent to the Ni matrix. The positrons localize in sulphur clusters that is due to affinity-induced confinement. In irradiated Ni-S system, the mobile vacancy-S atom complexes are formed at post-irradiation annealing above 350 K (stage III). These complexes form the three-dimensional vacancy clusters (nanovoids) decorated with S atoms. The radiation induced nucleation of S-rich clusters occurs when nanovoids dissociate.
EN
We present the results of THz luminescence investigations in structures with Si-doped quantum wells and Be-doped GaAsN layers under strong lateral electric field. The peculiar property of these structures is the presence of resonant impurity states which arise due to dimensional quantization in quantum wells and due to built-in strain in GaAsN epilayers. The experimentally obtained THz emission spectra consist of the lines attributed to intra-center electron transitions between resonant and localized impurity states and to the electron transitions involving the subband states. Absorption of THz radiation and its temperature dependence was also studied in structure with tunnel-coupled quantum wells at equilibrium conditions and under electric field.
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