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vol. 126
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issue 4
1005-1007
EN
A novel technique of producing composite electrochemical coatings with non-agglomerated nanodiamond reinforcing particles uniformly distributed in the matrix was developed. The technique is intended for coatings to be applied by transferring material from the anode to the cathode. The anode is fabricated using the mechanical alloying method that enables a composite with the uniform distribution of non-agglomerated nanoparticles to be formed.
EN
Agglomeration is the main problem that prevents large-scale implementation of nanodiamonds in the production of composites. Mechanical alloying was applied for crushing the agglomerates and to obtain uniform distribution of the primary nanodiamond particles in aluminium matrix composites. The commonly used X-ray diffraction method fails to detect non-agglomerated diamond nanoparticles 5 to 6 nm in size, if they are incorporated in a metal matrix. Synchrotron radiation was used for the identification of non-agglomerated nanodiamonds. Scanning electron microscopy and synchrotron investigation showed that mechanical alloying does not lead to transformation of the diamond structure into other allotropic forms of carbon and the nanodiamond reinforcing particles are uniformly distributed in the aluminium matrix.
EN
The temperature dependencies of coefficient of linear expansion α in the range of 4.2-300 K were obtained for SnTe samples with various degrees of deviation from stoichiometry. For the sample of stoichiometric composition in the α vs. temperature curves the anomalies connected with ferroelectric phase transition were detected. It was found that within cubic phase existence region α isotherms have a minimum at 50.4 at.% Te. Maximum dynamic stability at indicated composition is believed to be associated with the formation of vacancy superstructure.
EN
The effects of various high temperature-pressure treatments in Czochralski grown silicon (Cz-Si) implanted with 130 keV hydrogen to the dose of 4times10^{16} cm^{-2} were investigated using synchrotron X-ray topographic methods and rocking curve measurements. The high temperature- pressure processes included 10 h annealing at 450°C, 650°C, and 725°C at argon pressure 12 kbar and 1 bar. The topographic investigations were performed with projection and section methods in back-reflection and transmission geometry. It was found that annealing resulted in significantly reduced strain induced by the implantation, which became undetectable with presently used very sensitive synchrotron arrangement. A significant difference between the Cz-Si:H samples annealed at high and atmospheric pressure was observed. In the first case a distinct topographic contrast attributed to the formation of comparatively larger inclusions was observed. This effect was different at different temperatures. The samples annealed at enhanced pressure were more uniform and often produced significant interference effects.
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