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Formation of Porous n-A_3B_5 Compounds

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Šimkiene I., Kindurys A., Treideris M., Sabataityte J.

Acta Physica Polonica A

2008

vol. 113

issue 3

1085-1090

Porous layers of A_3B_5 compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area (1.5×1.5 cm^2) porous layers of uniform porosity were produced by anodization process of n-type A_3B_5 semiconductors,

Formation of Nanostructured Layers for Passivation of High Power Silicon Devices

100%

Šalucha D., Šimkiene I., Sabataityte J.

Acta Physica Polonica A

2008

vol. 113

issue 3

1079-1083

Nanocrystalline porous silicon films, which have been formed by using simple wet electrochemical etching process in HF electrolyte, were applied for passivation of high power silicon diodes. An optimal technology was designed to manufacture a uniform layer of porous silicon over the area of the p-n junction. The 8% increase in the yield was achieved onO100 mm diameter wafers with 69 cells of diodes in each, by using a very simple technology for the formation of porous layer for passivation of high power silicon diodes.

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2 Acta Physica Polonica A

2 2008

2 Sabataityte J.

2 Šimkiene I.

1 Kindurys A.

1 Treideris M.

1 Šalucha D.

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Formation of Porous n-A_3B_5 Compounds

Formation of Nanostructured Layers for Passivation of High Power Silicon Devices