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Structural and optical properties of layers of pentacene formed by PLD method

100%
Potera P., Sagan P., Virt I., Kuzma M., Wisz G., Rudyj I., Frugynski M.
Open Physics
|
2008
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vol. 6
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issue 4
765-770
EN
Organic films fabrication offers the possibility of producing electronic devices of low weight, mechanical flexibility and low cost. One suitable material for organic film fabrigation which is the subject of the great interest is pentacene, because it is characterized by the large carrier mobility (∼1 cm2/Vs). In this work, the growth of pentacene layers using pulse laser deposition (PLD) on different substrates (glass/ITO, Si) is described and various processing parameters are investigated. Two pulsed YAG:Nd3+ laser wavelengths were used for the ablation of the PLD target: the first harmonic at 1064 nm aGn:dNdth3+e second at 532 nm. The structure of the layers formed was examined using SEM and RHEED methods. The results were compared with results of optical spectroscopy studies. It will be shown that layers deposed using second harmonics have a higher quality than those for first harmonic. The other PLD parametersalso have a strong influence on the structure quality of layers.
2
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Growth and characterization of pulsed laser deposited ZnO thin films

100%
Vincze A., Bruncko J., Michalka M., Figura D.
Open Physics
|
2007
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vol. 5
|
issue 3
385-397
EN
One of the most important and promising materials from metal oxides is ZnO with specific properties for near UV emission and absorption optical devices. The properties of ZnO thin films strongly depend on the deposition method. Among them, pulsed laser deposition (PLD) plays an important role for preparing various kinds of ZnO films, e.g. doped, undoped, monocrystalline, and polycrystalline. Different approaches - ablation of sintered ZnO pellets or pure metallic Zn as target material are described. This contribution is comparing properties of ZnO thin films deposited from pure Zn target in oxygen atmosphere and those deposited from sintered ZnO target. There is a close connection between final thin film properties and PLD conditions. The surface properties of differently grown ZnO thin films are measured by secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Furthermore, different approaches - ablation of sintered ZnO pellet or pure metallic Zn as target materials are described. The main results characterize typical properties of ZnO films versus technological parameters are presented.
3
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Comparative study of ZnO layers prepared by PLD from different targets at various oxygen pressure levels

84%
Haško D., Bruncko J., Vincze A., Uherek F. e.
Open Physics
|
2009
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vol. 7
|
issue 2
345-349
EN
Two series of polycrystalline zinc oxide (ZnO) layers, from Zn or ZnO targets, were grown on silicon (1 1 1) substrates by pulsed laser deposition (PLD) at ambient oxygen pressure levels, stepwise increased from 1 to 35 Pa. For ablation of targets, a pulsed Nd:YAG laser was used. The structural and morphological properties of the layers were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM), and secondary ion mass spectrometry (SIMS). The SEM images of ZnO layers in SE mode show a uniform granular structure and modified surface morphology, depending on oxygen pressure. The mean grain size in height and lateral directions decreases with an increase of oxygen pressure from 1 to 5 Pa, while a subsequent rise of oxygen pressure from 5 to 35 Pa will cause an increase in the grain size. The AFM measurement revealed that the surface structures of zinc oxide layers grown from different targets were similar, and the layers formed at an ambient oxygen pressure of 5 Pa exhibited the smallest values of calculated roughness and granularity. SIMS depth profiling analyses confirmed that the ZnO composition was homogenous across the layer, up to the abrupt change of chemical composition at the interface between the ZnO layer and the Si substrate.
4
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Control of sputtering parameters for deposition of NbN thick films

84%
Jha R., Awana V. P. S.
Novel Superconducting Materials
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2015
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vol. 1
|
issue 1
EN
We report a detailed study on control of sputtering parameters for synthesizing NbN superconducting thick films. The NbN films are deposited on single crystalline silicon (100) by DC reactive sputtering, i.e., deposition of Nb in the presence of reactive N2 gas. After several runs, samples were prepared with Ar:N2 partial gas ratios of 90:10, 80:20 and 70:30 for a deposition time of 10 minutes. The fabricated films (400 nm thick) crystallize with a cubic structure, with a small quantity of Nb/NbOx embedded in the main NbN phase. All three samples are characterized by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDAX), to examine their microstructure and elemental compositional distributions, respectively. The roughness was mesured by atomic force microscopy (AFM). The optimized film prepared with Ar:N2 gas ratio of 80:20 has a Tc(R = 0) in zero and 140 kOe fields of 14.8 K and 8.8 K, respectively. The upper critical field Hc2(0) of the studied superconducting films is calculated from magneto-transport [R(T )H] measurements using GL and WHH equations.
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