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The Current Phenomenon in the Indium-Tin Oxide-Alignment Layer-Liquid Crystal Structure

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Mykytyuk Z., Fechan A., Sushynsky O., Yasynovska O., Kotsun V.
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issue 1
248-250
EN
This work is connected to investigation of frequency dependences of conductive value and dielectric conductivity of the indium-tin oxide-alignment layer-liquid crystal structure which allows to find new ways in formation of the electrically stabilized structure of liquid crystal materials for the optoelectronic devices.
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