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Theoretical study of NO3− interacting with carbon nanotube

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Guerini S., Azevedo D., Lima M., Zanella I., Filho J.
Open Physics
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2008
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vol. 6
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issue 1
105-108
EN
This paper deals with quantum mechanical interaction of no 3− with (5,5) and (8,0) swcnts. To perform this we have made an ab initio calculation based on the density functional theory. In these framework the electronic density plays a central role and it was obtained of a self-consistent field form. It was observed through binding energy that NO3− molecule interacts with each nanotube in a physisorption regime. We propose these swcnts as a potential filter device due to reasonable interaction with NO3− molecule. Besides this type of filter could be reusable, therefore after the filtering, the swcnts could be separated from NO3− molecule.
2
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Investigation of the electronic structure of the SbSeBr cluster

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Audzijonis A., Gaigalas G., Žigas L., Pauliukas A., Šalkus B., Žaltauskas R., Kvedaravičius A., Čerškus A., Narušis J.
Open Physics
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2008
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vol. 6
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issue 3
415-421
EN
The energy levels of valence bands (VB) in SbSeBr crystals were calculated for investigation of the photoelectron emission spectra of A5B6C7 - type crystals. The molecular model of this crystal was used for calculation of VB by the Density Functional Theory (DFT) and Unrestricted Hartree - Fock (UHF) methods. The molecular cluster consisting of 20 molecules of SbSeBr was used for calculations of averaged total density of states including atom vibrations. The spectra of averaged total density of states from VB in the SbSeBr cluster were compared with experimental photoelectron emission spectra from VB of A5B6C7 - type crystals. The results of comparison clarify that the atomic vibrations are one of possible reasons for the smoother appearance of the experimental X-ray photoelectron spectrum (XPS).
3
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Magnetic cluster developement in In1−x MnxSb semiconductor alloys

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Rednic L., Deac I., Dorolti E., Coldea M., Rednic V., Neumann M.
Open Physics
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2010
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vol. 8
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issue 4
620-627
EN
X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), Transmission Electron Microscopy (TEM) and magnetic measurements as a function of applied magnetic field and temperature for In1−x MnxSb (0.05≤x≤0.2) system are reported. Magnetic measurements performed at high and small magnetic field in ZFC and FC indicate the coexistence of ferromagnetic In1−x MnxSb solid solution and two types of magnetic cluster: ferromagnetic MnSb and ferrimagnetic Mn2Sb. XPS valence band and Mn 2p core level spectra have confirmed the presence of MnSb and Mn2Sb phases. TEM images show some manganese antimonide phase microinclusions with dimension between (30–40) nm.
4
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Optimizing the InGaAs/GaAs Quantum Dots for 1.3 μm Emission

100%
Maryński A., Mrowiński P., Ryczko K., Podemski P., Gawarecki K., Musiał A., Misiewicz J., Quandt D., Strittmatter A., Rodt S., Reitzenstein S., Sęk G.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
386-390
EN
Hereby we present comprehensive experimental and theoretical study on fundamental optical properties and electronic structure of GaAs-based quantum dots grown using metalorganic chemical vapor deposition technique. The substantial redshift of emission, to the second telecommunication window of 1.3 μm, in comparison to standard InGaAs/GaAs quantum dots is obtained via strain engineering utilizing additional capping layer of In_{0.2}Ga_{0.8}As in this context referred to as strain reducing layer. It ensures lowering of the energy of the ground state transition to more application relevant spectral range. Optical properties of the quantum dot structure has been experimentally characterized by means of photoreflectance spectroscopy and power-dependent photoluminescence revealing 3 transitions originating from hybrid states confined in an asymmetric double quantum well formed of the wetting layer and strain reducing layer, as well as higher states of the quantum dots themselves with the first excited state transition separated by 67 meV from the ground state transition. Origin of the observed transitions was confirmed in theoretical modelling using 1-band single-particle approach for the quantum well part, and excitonic quantum dot spectrum obtained within 8 band k·p formalism followed by configuration interaction calculations, respectively. Additionally, photoluminescence excitation spectroscopy measurements allowed to identify a spectral range for efficient quasi-resonant excitation of the investigated quantum dots into the 2D density of states to be in the range of 835-905 nm.
5
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STM investigation of cobalt silicide nanostructures’ growth on Si(111)-(√19 Ã- √19) substrate

100%
Cegiel M., Bazarnik M., Czajka R.
Open Physics
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2009
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vol. 7
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issue 2
291-294
EN
Continuing miniaturization of electronic devices necessarily requires assembly of several different objects or devices in a small space. Therefore, besides thin films growth, the possibility of fabricating wires and dots [1, 2] at the nanometre scale composed of metal silicides is of the top interest. This report is about the STM/STS investigation of cobalt silicides’ nanostructures created on Si(111)-(√19 Ã- √19) substrates via Co evaporation and post deposition annealing. This (√19 Ã- √19) reconstruction was induced by Ni doping. Less than 1ML of Co on surface was obtained. Surface reconstruction induced growth of agglomerates of clusters rather than an uniform layer. The post deposition annealing of a crystal sample (up to 670 K, 770 K, 870 K, 970 K, 1070 K and 1170 K) led to creation of silicides’ nanostructures. Measurements showed that coalescence of Co nanoislands begun around 970 K. Annealing above 1070 K led to alloying of a Co, Ni and Si. As a consequence the Si(111)-(7Ã-7) reconstruction occurred at the cost of Si(111)-(√19 Ã- √19).
6
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STM/STS investigation of carbon nanotubes deposited on Bi2Te3 surface

100%
Bazarnik M., Cegiel M., Biskupski P., Jazdzewska M., Mielcarek S. a., Sliwinska-Bartkowiak M. g., Czajka R.
Open Physics
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2009
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vol. 7
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issue 2
295-298
EN
This paper reports our scanning tunneling microscopy and spectroscopy (STM/STS) study of double-walled and multi-walled carbon nanotubes (CNTs) of different diameter deposited on Bi2Te3 (narrow gap semiconductor). The approximate diameter of the studied double-walled and multi-walled CNTs was 2 nm and 8 nm, respectively. Crystalline Bi2Te3 was used as a substrate to enhance the contrast between the CNTs and the substrate in the STS measurements performed to examine peculiarities of CNT morphology, such as junctions, ends or structural defects, in terms of their electronic structure.
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