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EN
In this paper we present studies of magnetization relaxation in a (Cd,Mn)Te quantum well containing 3.2% of Mn, after a pulse of magnetic field. The relaxation was found to be very fast, with dominant component faster than 10 ns. Upon application of static magnetic field the relaxation does not slow down, in contrast with the behavior of very diluted quantum wells or bulk material.
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We report on epitaxial growth of diluted magnetic semiconductor (Zn,Co)Te. Reflectivity spectra reveal excitonic transition which split under magnetic field due to giant Zeeman effect. Magnetooptical effects can be described using literature data.
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EN
Optical properties of CdTe/ZnTe quantum dots are studied as a function of a capping layer thickness by means of time-integrated and time-resolved microphotoluminescence. The samples are grown by MBE and covered with 10 nm and 100 nm capping layer. Despite that the proximity of the surface may result in an enhanced rate of non-radiative processes limiting the quantum dots optical performance, the set of results indicates that reduction of the capping layer thickness down to 10 nm has no effect on the quantum dot emission intensity and decay rate, contrary to the previously reported case of InAs/GaAs quantum dots.
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We report MBE growth and properties of samples with self assembled quantum dots with single manganese ions and low density of quantum dots. Manganese concentration was calibrated using magneto-reflectivity measurements and the giant Zeeman effect in (Cd,Mn)Te and (Zn,Mn)Te layers. Successful incorporation of Mn in the CdTe/ZnTe quantum dots was confirmed using micro-photoluminescence measurements: single manganese ion in quantum dot manifests in sixfold splitting of exciton emission lines due to s, p-d exchange interaction.
EN
We describe the realization and characterization of a distributed Bragg reflectors and InAs quantum dots grown by molecular beam epitaxy. The distributed Bragg reflectors are based on a stack of eight or twenty pairs of GaAs and AlAs layers with a stopband centered at about E_0=1.24 eV (λ_0=1000 nm). The whole structures exhibit a reflectivity coefficient above 90%. The growth rate was monitored in situ by measurement of the oscillations of the thermal emission intensity. The investigations conducted on the InAs quantum dots grown on GaAs show photoluminescence around E=1.25 eV (λ=990 nm). The combination of these two elements results in the realization of a microcavity containing InAs quantum dots and surrounded by 20 pairs of distributed Bragg reflectors.
EN
In this paper we present optical studies of CdTe quantum dots formed using Zn-induced reorganization. The pattern of quantum dot photoluminescence lines is found to be similar to typical results reported for quantum dots grown with other techniques, although the positively charged exciton line is relatively more pronounced. Also the energy spacing between biexciton and exciton lines is found to be larger than in typical results. Zn-induced reorganization results in quantum dots density higher by an order of magnitude than in Te-induced quantum dots.
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