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Coherent laser irradiation of amorphous carbon films formed on Si substrates by ion beam deposition from pure acetylene and acetylene/hydrogen gas mixture is analyzed in this work. The films were irradiated with nanosecond YAG:Nd laser (Ekspla NL301G) at the first (1064 nm, 6 ns), the second (532 nm, 4.2 ns) and the third (355 nm, 28 ns) harmonic by scanning or repeating (10 pulses to one point) regime. Irradiation by the first laser harmonic leads to a minor increase of graphite phase content and shows SiC formation. Formation of carbides was observed at the second harmonic irradiation when irradiation intensity is low (< 10 MW/cm^2). Graphitization became more intensive when power density of irradiation increased and the films transformed to the glass carbon and nano/micro crystallite compound at intensive ablation regime ( ≈ 24 MW/cm^2). Early ablation starts at irradiation by the third laser harmonic with the intensity of ≈ 8 MW/cm^2 with an increase of Si substrate roughness. Swelling of films was obtained when the sample was irradiated at the third harmonic with 1 MW/cm^2.
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