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Hydrostatic Pressure Studies of Asymmetric Double-Barrier Resonant Tunneling Diodes

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Diniz R., Smoliner J., Gornik E., Suski T., Meiners U., Brugger H.

Acta Physica Polonica A

1993

vol. 84

issue 4

625-628

Tunneling processes in double-barrier GaAs/AlAs diodes with an incorporated AlGaAs pre-barrier were studied under hydrostatic pressure. The electrical characteristics resulting from a pre-barrier on the side of the emitter can be explained at 1 bar, solely by the Γ-profile: increasing pressure shows that the pre-barrier does not reduce the Γ-X tunneling. A pre-barrier on the collector side leads to charge buildup at the X minimum within the AlAs collector barrier.

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1 Acta Physica Polonica A

1 1993

1 Brugger H.

1 Diniz R.

1 Gornik E.

1 Meiners U.

1 Smoliner J.

1 Suski T.

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Hydrostatic Pressure Studies of Asymmetric Double-Barrier Resonant Tunneling Diodes