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Optical Properties of Nano-Crystalline Zirconia Thin Films Prepared at Different Post-Oxidation Annealing Times

100%
Hojabri A., Pourmohammad S.
Acta Physica Polonica A
|
2016
|
vol. 129
|
issue 4
647-649
EN
The zirconia (ZrO₂) is one of the transition-metal oxides with most excellent optical properties which thus attracts great attention in optical engineering. A variety of methods were used for deposition of ZrO₂ thin films on different substrates. In the present work, homogenous, transparent nanocrystalline zirconia thin films were grown by thermal oxidation of zirconium (Zr) thin films deposited on quartz substrate using DC magnetron sputtering technique. The objective of this study is to reveal the effect of thermal oxidation time on structural and optical properties of deposited films. The XRD results revealed the formation of single phase ZrO₂ with tetragonal structure in the films at different thermal oxidation times. The optical constant of ZrO₂ thin films was calculated from the UV-visible transmission spectra. It was found that the increase of thermal oxidation time leads to the increase of transmittance and optical band gap energy of the films. The AFM results showed that thermal oxidation time influences the surface morphology of the films.
2
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Influence of Thermal Oxidation Temperatures on the Structural and Morphological Properties of MoO_3 Thin Films

81%
Hojabri A., Hajakbari F., Emami Meibodi A., Moghri Moazzen M.
Acta Physica Polonica A
|
2013
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vol. 123
|
issue 2
307-308
EN
In this study, molybdenum (Mo) thin films have been deposited on Si substrate by dc magnetron sputtering. Then for preparation of MoO_3 thin films the thermal oxidation of Mo thin films under the oxygen flow was employed in the electrical furnace. The influence of the different thermal oxidation temperatures at 400, 600, 800 and 1000C on the structural and morphological properties of MoO_3 thin films were characterized by X-ray diffraction and atomic force microscopy, respectively. The results show that the crystallinity and surface morphology of the films are strongly dependent on the thermal oxidation temperatures.
3
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Nanocrystalline Nickel Oxide (NiO) Thin Films Grown on Quartz Substrates: Influence Of Annealing Temperatures

81%
Hajakbari F., Taheri Afzali M., Hojabri A.
Acta Physica Polonica A
|
2017
|
vol. 131
|
issue 3
417-419
EN
In the present investigation, nanocrystalline NiO thin films were prepared by thermal oxidation annealing of DC magnetron sputtered Ni thin films on quartz substrates. The effect of annealing temperature on the films structural, morphological and optical properties was investigated. The XRD analysis shows that all prepared films were of NiO with cubic structure and (200) orientation. The thickness of NiO films was in range of 40-100 nm. The average crystallite size is found to increase from 16 to 36 nm and the optical band gap energy decreases from 3.62 to 3.38 eV by increasing the annealing temperature from 400°C to 600°C. The AFM and SEM results show that the annealing temperature effectively influences the surface morphology of the films.
4
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Synthesis of Nickel-Doped TiO₂ Thin Films and Their Structural and Optical Properties at Different Annealing Temperatures

81%
Hojabri A., Adavi M., Hajakbari F.
Acta Physica Polonica A
|
2017
|
vol. 131
|
issue 3
386-388
EN
Titanium oxide (TiO₂) and nickel-doped TiO₂ thin films were deposited onto glass substrates by reactive DC magnetron sputtering technique at different oxygen contents. Then, prepared films were annealed at temperatures of 300 and 500°C. Influence of O₂/Ar ratio, nickel doping and annealing temperature on structural, morphological and optical properties of TiO₂ thin films were studied and discussed. The XRD analysis results have confirmed the amorphous nature of the films. The results show that increase of annealing temperature and oxygen content in argon-oxygen gas mixture have lead to an increase of films transparency. By doping the TiO₂ with nickel the optical band gap energy has slightly decreased. AFM analysis results have shown that the surface morphology of films is effectively influenced by annealing temperature.
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