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1
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Frequency Dependence of Shot Noise in Resonant Diodes under Coherent Tunneling

100%
Aleshkin V., Reggiani L., Rosini M.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
298-303
EN
The current spectral density and the Fano factor of a resonant diode are investigated as a function of frequency up to values just below the inverse of the transit time. We consider the case of coherent tunneling for a symmetric double barrier structure at voltages up to the first current peak at 77 K. At high frequencies the Fano factor is found to become suppressed systematically at a value of 0.25 independently of frequency. This suppression below 0.5 is an indication of coherent against sequential tunneling transport.
2
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Coherent Terahertz Radiation Generation Assisted by Low-Temperature Optical Phonon Emission: Achievements and Perspectives

88%
Shiktorov P., Starikov E., Gružinskis V., Varani L., Reggiani L.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
795-802
EN
The conditions for THz radiation generation caused by electron transite time resonance in momentum and real spaces under low-temperature optical-phonon emission are analyzed. It is shown that such a phenomenon provides a unique possibility to realize the sub-THz and THz radiation generation at the border of the electrooptical and electronic techniques by using both the approaches: (i) amplification of transverse electromagnetic waves in 3D bulk materials and 2D quantum wells, and (ii) longitudinal current instabilities in submicron and overmicron n⁺nn⁺ diodes.
3
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Modeling of THz-Electro-Optical Sampling Measurements

88%
Shiktorov P., Starikov E., Gružinskis V., Varani L., Reggiani L.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
913-916
EN
We carry out a theoretical analysis of THz-electro-optical sampling experimental technique applied to semiconductor structures. The difficulties/impossibility of determining the small-signal conductivity spectrum in the framework of such a technique are analyzed and discussed.
4
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High-Frequency Noise in Modern FET/HEMT Channels Caused by the Excitation of 2D-Plasma Waves

88%
Shiktorov P., Starikov E., Gružinskis V., Varani L., Reggiani L.
Acta Physica Polonica A
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2011
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vol. 119
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issue 2
117-120
EN
The problems related with the intrinsic noise in FET/HEMT channels induced by continuous branching of the total current between channel and gate are considered in the framework of a simple analytical model and its predictions on the current-noise spectra. Main branching-induced effects such as the appearance of an additional noise related to the excitation of plasma waves, its dependence on FET/HEMT embedding circuits, interference properties, etc. are analysed.
5
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Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors

76%
Starikov E., Shiktorov P., Gružinskis V., Varani L., Vaissière J., Palermo C., Reggiani L.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
408-411
FR
Monte Carlo simulations of high-field transport in semiconductor nitrides, GaN and InN, is used to calculate the velocity-field characteristics and the high-frequency behavior of the differential mobility, spectral density of velocity fluctuations, and noise temperature. It is found that due to very short relaxation time scales of nitrides, the characteristic frequencies associated with extrema and cutoff decay of the negative differential mobility, etc. are shifted to higher frequency range with respect to the case of standard A_3B_5 compounds. This property is favorable for applications of nitrides in the THz frequency range.
6
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Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits

64%
Shiktorov P., Starikov E., Gružinskis V., Varani L., Vaissière J., Reggiani L., Pérez S., González T.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
396-399
EN
We report Monte Carlo simulations of electronic noise in heavily doped nanometric GaAs Schottky-barrier diodes operating in series with a parallel resonant circuit when a high-frequency large-signal voltage is applied to the whole system. Significant modifications of the noise spectrum with respect to the unloaded diode are found to occur in the THz-region.
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