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Monte Carlo Treatment of Non-Equilibrium Processes in n-Type InSb Crystals

100%
Ašmontas S., Raguotis R.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
929-932
EN
Numerical calculation by Monte Carlo method of the dynamic behaviour of electron ensemble in n-type InSb crystals after step-like application of electric field is presented. The results show essential influence of electron density on the energy relaxation time. The effect of electron energy cooling below equilibrium temperature in compensated n-InSb is obtained numerically for the first time, which is in agreement with experimental results.
2
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Transient Response of Electrons and Phonons in ZnTe Crystals

100%
Brazis R., Raguotis R.
Acta Physica Polonica A
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2008
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vol. 113
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issue 3
933-936
EN
The response of electron and phonon ensemble to the switching on and off electric field E in n-type ZnTe crystals is simulated by Monte Carlo method. The results at T=10 K show significant accumulation of LO-phonons and the LO phonon band population inversion with respect to the LA band;the inversion is necessary for the stimulated transfer of LO-LA energy difference to photons. The maximum inversion is at E=7 kV/cm. At T=300 K no phonon band inversion but fast (sub-picosecond) drift velocity switching with ≈100 GHz repetition is feasible.
3
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LO-Phonon Band Filling by Means of Charge Carriers Accelerated in Electric Fields

100%
Raguotis R., Brazis R.
|
EN
Electron and phonon distribution in momentum space is modeled using Monte Carlo method. Calculated LO phonon distribution in zinc-blende GaN deviates dramatically from the thermal equilibrium (Planck) function, and well coincides with the phonon number elucidated from the existing anti-Stokes Raman scattering experiments.
4
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The Influence of Phonon Emission on Electron Transport in Hexagonal and Cubic Gallium Nitride

100%
Brazis R., Raguotis R.
Acta Physica Polonica A
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2005
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vol. 107
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issue 2
324-327
EN
Electron transport characteristics of GaN crystals in high electric fields are shown to be essentially influenced by different optical phonon modes inherent to the hexagonal and cubic phases of these compound crystals. Additional optical phonon modes (≈26 meV) competing with the higher-energy ones (≈92 meV) in hexagonal GaN, together with the low-lying satellite valley (Γ_3), dramatically reduce the drift mobility of electrons in comparison with conventional models. Presented Monte Carlo data are in excellent agreement with the time-of-flight experiment. The cubic GaN crystal phase with its satellite electron energy valleys shifted well above the main (Γ_1) valley is chosen as a convenient medium for elucidating the role of high-energy longitudinal optical phonon accumulation. A simple efficient one-particle Monte Carlo method is proposed for an account of excess phonons. Phonon heating is shown to bring about the moderate additional reduction of the drift mobility and an increase in mean electron energy.
5
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Third-Order Susceptibility of Silicon Crystals Measured with Millimeter-Wave Gyrotron

61%
Narkowicz R., Siegrist M., Moreau P., Hogge J., Raguotis R., Brazis R.
Acta Physica Polonica A
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2011
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vol. 119
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issue 4
509-513
EN
We investigate experimental dependence of the third harmonic generation efficiency in the n-type Si crystals on the geometrical dimensions of the sample, polarization and power of the fundamental wave. The efficiency increases monotonically with the rise of the sample thickness up to a threshold value, and decreases dramatically above the threshold. At shorter propagation distances the generation efficiency could be correctly simulated using the layered medium approximation and the numerically calculated electron drift velocity response to the pumping wave electric field to describe the change of the semiconductor properties under high-power microwave irradiation.
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