The Raman spectra of TlGa_xIn_{1-x}S_2 layered mixed crystals were studied for a wide range of composition (0≤x≤1) at T=50 K. The effect of crystal disorder on the line width broadening of the Raman-active modes are discussed. The asymmetry in the Raman line shape is analyzed for two interlayer and intralayer modes exhibiting one-mode behavior.
Thermally stimulated current measure ments are carried out on TlInS_2 layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS_2 crystal in the low-temperature region.
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