Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
enabled [disable] Abstract
Number of results

Results found: 4

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
EN
Kerr magnetometry was employed to study the temperature dependence of magnetization and magnetic hysteresis loops in ferromagnetic EuS-PbS semiconductor multilayers in the temperature range T=3-35 K at low magnetic fields H≤150 Oe. For EuS-PbS/KCl(100) structures with ultrathin non-magnetic PbS spacer of 1~nm, we observed a maximum on the temperature dependence of magnetization at low fields H≤30 Oe. For higher fields, we found for these structures a regular mean-field-like increase in magnetization with decreasing temperature. The same regular behavior was also found for EuS-PbS/KCl structures with thicker PbS spacer, as well as for all EuS-PbS/BaF_2(111) multilayers independently of spacer thickness. For qualitative interpretation of these findings, we consider two magnetic contributions to the total energy of EuS-PbS multilayers: the Zeeman energy and the antiferromagnetic interlayer exchange coupling between ferromagnetic EuS layers via diamagnetic PbS spacer.
EN
Antiferromagnetic interlayer exchange coupling in semiconductor EuS-PbS-EuS ferromagnetic trilayers grown on PbS (001) substrates with ultrathin (0.6-1.2 nm) nonmagnetic PbS spacers is studied by SQUID magnetometry and model calculations. Analysis of the experimentally observed magnetic field and temperature dependence of the magnetization of EuS-PbS structures reveals a rapid decrease in the interlayer coupling energy with increasing temperature indicating a temperature dependence of the microscopic coupling mechanism acting in these all-semiconductor ferromagnetic/nonmagnetic multilayers.
EN
Structures containing magnetic metallic layers attract a lot of attention because of their possible applications in the area of spintronics. The hybrid structures compatible with the Si crystal lattice parameter are of special interest. In this work the short-period Fe/Si multilayers were grown by the sputtering onto (001)-oriented Si substrate and investigated by various techniques. After the deposition, all multilayers were characterized by atomic force microscopy. The goal of the present paper was to determine the chemical composition of thin layer created at the interface in Fe/Si multilayers due to the Fe diffusion into Si, as well as to analyze the phenomena, which take place in this area. The results of the optical characterization by the Raman scattering were correlated with the magnetic properties of investigated structures (determined by means of the Kerr rotation).
EN
Magnetic properties of semiconductor EuS(t)-PbS(d)-EuS(t) ferromagnetic trilayers (t=30÷300Å and d=7.5÷70Å) grown on n-type monocrystalline PbS (100) substrate were studied by SQUID magnetometry and ferromagnetic resonance technique yielding, in particular, the dependence of the ferromagnetic Curie temperature on the thickness of the EuS layer. Structural parameters of layers were examined by X-ray powder diffraction analysis. A high structural quality of the substrate and the multilayer was verified by the measurements of the X-ray rocking curve width indicating the values of the order of 100 arcsec and by atomic force microscopy revealing the presence on the cleft PbS surface regions practically flat in the atomic scale over the area of 1×0.1μm^2.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.