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vol. 125
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issue 6
1303-1306
EN
Influence of Cu particles for the carbon nanostructures formation during a-C:H films deposition by plasma enhanced chemical vapor deposition method from pure acetylene gas plasma were analyzed in this work. Silicon wafer and Cu target were simultaneously bombarded by Ar^{+} ions for the Cu particles deposition on the silicon before a-C:H films formation. It was obtained that hydrogenated silicon carbide forms on this defected Si/Cu surface during the first stage of carbon film deposition. Structure of a:C-H films and conditions of nanostructures formation depended on substrate temperature and Cu concentration in the film, then deposition time was 300 s.
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100%
EN
Coherent laser irradiation of amorphous carbon films formed on Si substrates by ion beam deposition from pure acetylene and acetylene/hydrogen gas mixture is analyzed in this work. The films were irradiated with nanosecond YAG:Nd laser (Ekspla NL301G) at the first (1064 nm, 6 ns), the second (532 nm, 4.2 ns) and the third (355 nm, 28 ns) harmonic by scanning or repeating (10 pulses to one point) regime. Irradiation by the first laser harmonic leads to a minor increase of graphite phase content and shows SiC formation. Formation of carbides was observed at the second harmonic irradiation when irradiation intensity is low (< 10 MW/cm^2). Graphitization became more intensive when power density of irradiation increased and the films transformed to the glass carbon and nano/micro crystallite compound at intensive ablation regime ( ≈ 24 MW/cm^2). Early ablation starts at irradiation by the third laser harmonic with the intensity of ≈ 8 MW/cm^2 with an increase of Si substrate roughness. Swelling of films was obtained when the sample was irradiated at the third harmonic with 1 MW/cm^2.
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