Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 4

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Controlling the Biexciton-Exciton Cascade Kinetics in a Quantum Dot via Coupling to a Microcavity Optical Mode

100%
Sęk G., Krizhanovskii D., Kulakovskii V., Reitzenstein S., Kamp M.
Acta Physica Polonica A
|
2016
|
vol. 129
|
issue 1a
A-44-A-47
EN
The luminescence of single and two exciton states in a quantum dot embedded in the active layer of a micropillar cavity has been investigated. Temperature tuning has been used to bring the energy states of the quantum dot and the cavity into resonance. Studying the resonance behavior of the exciton and biexciton transitions with cavity mode revealed a similar Purcell effect for both lines. The cavity-induced changes of the respective radiative lifetimes have been shown to allow for controlling the ratio between the single and two exciton occupation and their relative emission rates in a single quantum dot.
2
Content available remote

Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio

73%
Musiał A., Sęk G., Maryński A., Podemski P., Misiewicz J., Löffler A., Höfling S., Reitzenstein S., Reithmaier J., Forchel A.
Acta Physica Polonica A
|
2011
|
vol. 120
|
issue 5
883-887
EN
Hereby, we present a study of a thermal quenching of emission from self-assembled epitaxial highly asymmetric quantum dots in InGaAs/GaAs material system for both ensemble and single dot regime. Pronounced interplay between the intensity of wetting layer and quantum dots originated emission was observed as the temperature was increased, evidencing a thermally activated energy transfer between the two parts of the system and an important role of the wetting layer in determining the optical properties of these anisotropic nanostructures. The carrier activation energies have been derived and possible carrier loss mechanisms have been analyzed. Single dot study revealed activation energies slightly varying from dot to dot due to size and shape distribution. The problem of the shape uniformity of individual quantum dot has also been addressed and possibility of additional carrier localization within the investigated structures has been found to be insignificant based on the recorded spectroscopic data.
3
Content available remote

Optimizing the InGaAs/GaAs Quantum Dots for 1.3 μm Emission

59%
Maryński A., Mrowiński P., Ryczko K., Podemski P., Gawarecki K., Musiał A., Misiewicz J., Quandt D., Strittmatter A., Rodt S., Reitzenstein S., Sęk G.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 2
386-390
EN
Hereby we present comprehensive experimental and theoretical study on fundamental optical properties and electronic structure of GaAs-based quantum dots grown using metalorganic chemical vapor deposition technique. The substantial redshift of emission, to the second telecommunication window of 1.3 μm, in comparison to standard InGaAs/GaAs quantum dots is obtained via strain engineering utilizing additional capping layer of In_{0.2}Ga_{0.8}As in this context referred to as strain reducing layer. It ensures lowering of the energy of the ground state transition to more application relevant spectral range. Optical properties of the quantum dot structure has been experimentally characterized by means of photoreflectance spectroscopy and power-dependent photoluminescence revealing 3 transitions originating from hybrid states confined in an asymmetric double quantum well formed of the wetting layer and strain reducing layer, as well as higher states of the quantum dots themselves with the first excited state transition separated by 67 meV from the ground state transition. Origin of the observed transitions was confirmed in theoretical modelling using 1-band single-particle approach for the quantum well part, and excitonic quantum dot spectrum obtained within 8 band k·p formalism followed by configuration interaction calculations, respectively. Additionally, photoluminescence excitation spectroscopy measurements allowed to identify a spectral range for efficient quasi-resonant excitation of the investigated quantum dots into the 2D density of states to be in the range of 835-905 nm.
4
Content available remote

Semiconductor Cavity Quantum Electrodynamics with Single Quantum Dots

59%
Reitzenstein S., Schneider C., Münch S., Kistner C., Strauss M., Huggenberger A., Franeck P., Weinmann P., Kamp M., Höfling S., Worschech L., Forchel A.
Acta Physica Polonica A
|
2009
|
vol. 116
|
issue 4
445-450
EN
This paper summarizes recent progress achieved in the field of semiconductor cavity quantum electrodynamics with single quantum dots with the focus being on micropillar cavities. Light-matter interaction both in the strong and weak coupling regime is presented. Resonance tuning of the quantum dot by temperature, electric fields and magnetic fields is demonstrated while the strong coupling regime can be reached. Additionally, deterministic device integration of single positioned quantum dots is reported by a combination of site controlled quantum dot growth via directed nucleation and subsequent device alignment to overcome the degree of randomness of the quantum dot position in so far most common quantum dot-cavity systems.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.