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1
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The oscillatory galvanomagnetic size-effect in multilayered structures

100%
Dekhtyaruk L.
Open Physics
|
2007
|
vol. 5
|
issue 1
91-102
EN
Within the framework of the modified semi-classical Fuchs-Sondheimer model, we investigated theoretically the electrical resistivity of multilayered structures (MLS) consisting of alternating metallic layers (of different purity and different thicknesses) in a transverse magnetic field as functions of the ratio of the adjacent layer thicknesses and the magnetic field value. We have derived both a general formula (valid at arbitrary values of layer thicknesses) and asymptotic expressions that are valid when metallic layers are thick or thin compared with the electron mean free path. We found a non-monotonic behavior in the resistivity vs. the value of an applied magnetic field. As we demonstrated, this behavior is sensitive to the characteristics of the electron scattering in the interlayer interfaces in low magnetic fields. Moreover, the MLS resistivity oscillates in high magnetic fields with the field value (or with the layer thicknesses). The oscillation includes the harmonics that correspond both to the each layer thicknesses and the total thickness. The intensity of the oscillation is determined by the diffusive electron scattering in the interfaces, and the oscillation amplitude is proportional to the coefficient of the electron transmission through the interlayer interfaces. We have calculated numerically the resistivity in a wide range of fields and layer thicknesses at various values of the parameters of the interface and bulk electron scattering.
2
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Interface resistive switching effects in bulk manganites

84%
Belogolovskii M.
Open Physics
|
2009
|
vol. 7
|
issue 2
304-309
EN
A physical mechanism driving the resistance switching in heterocontacts, formed by a metal counterelectrode and electrically conducting bulk perovskite manganites, is discussed. The nature of the inelastic, charge-hopping transport inside insulating and strongly inhomogeneous metal/manganite interfaces is studied theoretically. Comparison with measured current-voltage characteristics for a La0.67Ca0.33MnO3/Ag heterostructure in a high-resistance state reveals the presence of one or more charge traps along a conduction path within the interface. In a low-resistance state the main charge-transferring events are direct tunneling ones. The analysis of electrical noise measurements for a La0.82Ca0.18MnO3 single crystal in three different charge-transport regimes shows scattering centers with a broad, flat spectrum of excitation states, independent of manganite electrical and/or magnetic characteristics. All of these results are consistent with an oxygen-drift model for a bistable resistance state in perovskites.
3
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Electrical characteristics of HTS/manganite double layers

84%
Nurgaliev T., Štrbík V., Miteva S., Blagoev B., Mateev E., Neshkov L., Beňačka Š., Chromik Š.
Open Physics
|
2007
|
vol. 5
|
issue 4
637-649
EN
Superconductor/ferromagnetic (SC/FM) Y1Ba2Cu3O7−δ /La0.7Sr0.3MnO3 (YBCO/LSMO) double layers were prepared on LaAlO3 substrates by magnetron sputtering and their electrical and microwave parameters were investigated at 77 K. In the theoretical plan, simple formulas for estimation of the sensitivity of the SC surface impedance to the concentration changes of normal charge carriers were proposed and the surface resistance R S peculiarities of both SC and FM surfaces were described. Thinner YBCO/LSMO structure was characterized by lower SC parameters and higher surface resistance R S at ∼ 4 GHz. The difference of R S of sample SC surfaces was interpreted as due to a difference between the normal charge carrier densities in these samples. R S of the FM surface was higher than that of the SC surface due to the microwave losses of the magnetic subsystem. A peak of the microwave losses, observed in the thicker double layer, was assumed to be caused by uniform FMR in the LSMO film.
4
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Magnetotransport in Si ⟨Sb⟩ Delta-Layer after Swift Heavy Ion-Induced Modification

84%
Fedotov A., Skuratov V., Yurasov D., Novikov A., Svito I., Apel P., Fedotov A., Zukowski P., Fedotova V.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 2
229-232
EN
In the present paper the investigations of the influence of swift heavy ion irradiation on the magnetotransport in the antimony (Sb) δ-layer in silicon are reported. Temperature and magnetic field dependences of the resistance R(T,B) and the Hall coefficient R_H(T,B) in the temperature range of 2K < T < 300K and B ≤ 8T before and after the 167 MeV Xe⁺²⁶ ion irradiation (ion fluence of 10⁸ cm¯²) were measured. At the temperatures below 50K there is observed the transition from the Arrhenius log R(1/T) to a logarithmic R ≈ -log(T) dependence both before and after the swift heavy ion exposure which confirms the assumption that the carrier transport goes through the δ-layer mainly. Moreover, the transition from the positive to negative magnetoresistance was observed with the temperature decrease that is characteristic of the two-dimensional quantum corrections to the conductivity in the case of weak localization regime. The appropriate Thouless lengths L_{Th}(T) ≈ A × T^{p} (where p and A are dependent on the scattering mechanism) indicated their ≈ 25-30% decrease after the swift heavy ion exposure. It was shown that the exponent p values were close to the theoretical one of p = 1, confirming the realization of 2D weak localization regime in the carrier transport.
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