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Radiation Effects in DMAAS:Cr Ferroelectric Crystal

100%

Kapustianik V., Czapla Z., Eliyachevskyy Y., Korchak Y., Kulyk B., Rudyk V.

Acta Physica Polonica A

2003

vol. 104

issue 6

571-580

This paper presents the results of investigations of the radiation effects in NH_2(CH_3)_2Al(SO_4)_2×6H_2O crystals doped with chromium. On the basis of absorption spectroscopy and resonance Raman scattering study it has been shown that comparatively low doses of radiation first of all causes recharging of Cr^{3+} on Cr^{4+} ions. Besides, the processes of dehydrogenation and the changes in arrangement of the hydrogen bond network were observed. These changes are followed by distortion of the complexes bonded by such a type of bonds.

Phase Transitions and Fundamental Ferroelectric Dispersion in DMAAl_{1-x}Cr_{x}S Crystals

84%

Kapustianyk V., Eliyashevskyy Y., Czapla Z., Dacko S., Czupiński O., Rudyk V., Serkiz R., Sereda S., Semak S.

Acta Physica Polonica A

2015

vol. 127

issue 3

791-794

This paper presents the results of investigations of the temperature dependence of heat capacity and dielectric dispersion in the vicinity of ferroelectric-ferroelastic phase transition of dimethylammonium metal sulphate hexahydrate crystals DMAAl_{1-x}Cr_{x}S. In particular, it is shown that the isomorphous substitution of metal ion noticeably changes the temperature of phase transition and parameters of the fundamental ferroelectric dispersion observed around T_{c1}. These changes are explained in terms of clusters sizes and dynamics in the framework of order-disorder type phase transition mechanism.

High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions

68%

Sadovyi B., Amilusik M., Staszczak G., Bockowski M., Grzegory I., Porowski S., Konczewicz L., Tsybulskyi V., Panasyuk M., Rudyk V., Karbovnyk I., Kapustianyk V., Litwin-Staszewska E., Piotrzkowski R.

Acta Physica Polonica A

2016

vol. 129

issue 1a

A-126-A-128

Single crystals of Mg-doped GaN grown by high nitrogen pressure solution method in different crystallographic directions ([0001], [101̅1], and [101̅1̅]) were investigated in order to determine thermal stability of their electrical and optical properties. Obtained dependences of resistivity, the Hall coefficient and energy shift of Mg-related photoluminescence peak on annealing temperature allow to suggest that incorporation of Mg in GaN is significantly influenced by the direction of the crystallization front.

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3 Acta Physica Polonica A

1 2016

1 2015

1 2003

3 Rudyk V.

2 Czapla Z.

2 Kapustianyk V.

1 Amilusik M.

1 Bockowski M.

1 Czupiński O.

1 Dacko S.

1 Eliyachevskyy Y.

1 Eliyashevskyy Y.

1 Grzegory I.

1 Kapustianik V.

1 Karbovnyk I.

1 Konczewicz L.

1 Korchak Y.

1 Kulyk B.

1 Litwin-Staszewska E.

1 Panasyuk M.

1 Piotrzkowski R.

1 Porowski S.

1 Sadovyi B.

1 Semak S.

1 Sereda S.

1 Serkiz R.

1 Staszczak G.

1 Tsybulskyi V.

Search results

Radiation Effects in DMAAS:Cr Ferroelectric Crystal

Phase Transitions and Fundamental Ferroelectric Dispersion in DMAAl_{1-x}Cr_{x}S Crystals

High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions