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EN
The magnetic field dependence of the drag current induced by beams of acoustic phonons is studied in a 2D gas of carriers, formed in a heterostructure. This drag current is related to the velocity of the center of mass of the gas. The elimination of the degrees of freedom related to the relative motion of the carriers leads to a Langevin equation for the center-of-mass position vector. From this equation one can obtain an expression for the induced current density which depends on carrier density-density correlation functions. An explicit formula for the time-integrated current density is derived taking into account all intra and inter Landau level transitions. Corresponding numerical results are in good agreement with the experimental patterns.
EN
The patterns for the time integrated drag current induced by a pulsed beam of bulk phonons in a 2D gas of charge carriers are calculated. A beam of Planckian phonons propagates in a GaAs crystal. We considered a 2D gas of electrons lying in a {001} plane and a 2D gas of holes lying in the {311} plane. Planckian phonons are radiated by an extended (Gaussian) source.
EN
The response of a 2D gas of charge carriers of mobility μ in magnetic field B to pulsed phonon beams is considered. Previously we derived a quantum Langevin equation for the centre-of-mass of the carrier gas, which allows us to calculate the time integrated drag current. This formula is studied in the weak magnetic field limit. When the ratio of the cyclotron frequency ω_{c} to the frequency ω of phonons is small and μB ≪ 1, the general formula coincides with the corresponding expression obtained in the frame of the Boltzmann equation with the collision integral independent of B.
EN
We present a theoretical description of the influence of incoherent acoustic phonons on the magnetic anisotropy of magnetic semiconductors. Our theory is based on the six-band Kane model of the electron energy spectrum describing the valence band with k· p Hamiltonian including the hole-phonon interaction term. We include the effect of incoherent phonons through the hole self-energy in the six-band model, and assume a strong laser-pulse-induced flux of non-equilibrium acoustic phonons. The results of numerical calculations of magnetic anisotropy performed for (GaMn)(AsP) magnetic alloy semiconductors demonstrate the essential role of incoherent phonons.
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Ion Microscopy and Tomography

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EN
The use of light ions for microscopy and tomography is illustrated by a variety of recent applications in materials and life sciences at the Leipzig high-energy ion-nanoprobe LIPSION with a short comparison to other microscopic techniques. The versatility of ion techniques is exemplified by Rutherford backscattering spectrometry maps of thin films of solar cell materials, particle induced X-ray emission maps of manganese in ancient human bones, particle induced X-ray emission on single aerosol particles withμm size, and scanning transmission ion microscopy and tomography on pigs knee cartilage. Finally, the design of a single ion single living cell bombardment facility is sketched for studies of the cellular response and microdosimetry.
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