Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl
Preferences help
Polish version English version Language
enabled [disable] Abstract
Number of results

Results found: 4

Number of results on page
first rewind previous Page / 1 next fast forward last

Search results

help Sort By:

help Limit search:
first rewind previous Page / 1 next fast forward last
1
Content available remote

Ab-initio calculation of band structure and linear optical properties of SbSI in para- and ferroelectric phases

100%
Akkus H., Mamedov A.
Open Physics
|
2007
|
vol. 5
|
issue 1
25-34
EN
An ab-initio pseudopotential calculation has been performed by using density functional methods within the local density approximation (LDA) to investigate the band structure and optical properties of the ferroelectric-semiconductor SbSI in the para- and ferroelectric phases. It has been shown that SbSI has an indirect gap in both phases (1.45 eV and 1.49 eV in the para- and ferroelectric phases respectively) and that the smallest direct gap is at the S point of the Brillouin zone (1.56 eV and 1.58 eV in the para- and ferroelectric phases respectively). Furthermore, it is shown that first-order phase transition, from the paraelectric phase to the ferroelectric phase (the transiton temperature is about 22 °C), does not change the nature of the band gap. Moreover, the linear frequency dependent dielectric function, including self-energy effects, has been calculated along the c-polar axis in the para- and ferroelectric phases.
2
Content available remote

Band structure and optical properties of antimony-sulfobromide: density functional calculation

81%
Akkus H., Mamedov A., Kazempour A., Akbarzadeh H.
Open Physics
|
2008
|
vol. 6
|
issue 1
64-75
EN
The electronic structure, linear, and non-linear optical properties of ferroelectric-semiconductor SbSBr are investigated in the non-polar (paraelectric) and polar (ferroelectric) phase, using the density functional methods in the generalized gradient approximation. The electronic band structure obtained shows that SbSBr has an indirect forbidden gap of 2.16 and 2.21 eV in the paraelectric and ferroelectric phase, respectively. The linear photon-energy dependent dielectric functions and some optical functions, such as absorption and extinction coefficients, refractive index, energy-loss function, reflectivity, and optical conductivity in both phases and photon-energy dependent second-order susceptibilities in the ferroelectric phase are calculated. Moreover, some important optical parameters, such as the effective number of valence electrons and the effective optical dielectric constant, are calculated in both phases.
3
Content available remote

First-principles investigation of structural, electronic, optical and dynamical properties in CsAu

81%
Erdinc B., Soyalp F., Akkus H.
Open Physics
|
2011
|
vol. 9
|
issue 5
1315-1320
EN
The structural, electronic, optical and dynamical properties of CsAu compound in the CsCl(B2) phase were investigated using the density functional theory (DFT) within the generalized gradient approximation (GGA). The calculated lattice constant, static bulk modulus and first-order pressure derivative of the bulk modulus are reported and compared with previous experimental and theoretical calculations. The calculated electronic band structure for this compound is in good agreement with available theoretical and experimental studies. The present band calculation indicates that CsAu compound has an indirect gap at R→X points. Furthermore, the linear photon-energy-dependent dielectric functions have been calculated. For the first time, the electronic structure results are used, within the implementation of a linear-response technique, for calculations of phonon properties.
4
Content available remote

Structural and electronic properties of zincblende phase of TlxGa1−x AsyP1−y quaternary alloys: First-principles study

61%
Gulebaglan S., Dogan E., Aycibin M., Secuk M., Erdinc B., Akkus H.
Open Physics
|
2013
|
vol. 11
|
issue 12
1680-1685
EN
Using the first-principles band-structure method, we have calculated the structural and electronic properties of zincblende TlAs, TlP, GaAs and GaP compounds and their new semiconductor TlxGa1−x AsyP1−y quaternary alloys. Structural properties of these semiconductors are obtained with the Perdew and Wang local-density approximation. The lattice constants of TlxGa1−x As, TlxGa1−x P ternary and TlxGa1−x AsyP1−y quaternary alloys were composed by Vegard’s law. Our investigation on the effect of the doping (Thallium and Arsenic) on lattice constants and band gap shows a non-linear dependence for TlxGa1−x AsyP1−y quaternary alloys. The band gap of TlxGa1−x AsyP1−y , E g(x, y) concerned by the compositions x and y. To our awareness, there is no theoretical survey on TlxGa1−x AsyP1−y quaternary alloys and needs experimental verification.
first rewind previous Page / 1 next fast forward last
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.