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1
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Changes of tribological properties of Inconel 600 after ion implantation process

100%
Barlak M., Chmielewski M., Pietrzak K., Werner Z.
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2014
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issue 4
2
Content available remote

Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds

76%
Ratajczak R., Werner Z., Barlak M., Pochrybniak C., Stonert A., Zhao Q.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
845-848
EN
The defect build-up, structure recovery and lattice location of transition metals in ion bombarded and thermally annealed ZnO and GaN single crystals were studied by channeled Rutherford backscattering spectrometry and channeled particle-induced X-ray emission measurements using 1.57 MeV ⁴He ions. Ion implantation to a fluence of 1.2×10¹⁶ ions/cm² was performed using 120 keV Co and 120 keV Mn ions. Thermal annealing was performed at 800°C in argon flow. Damage distributions were determined using the Monte Carlo McChasy simulation code. The simulations of channeled Rutherford backscattering spectra reveal that the ion implantation leads to formation of two types of defect structures in ZnO and GaN such as point and extended defects, such as dislocations. The concentrations of both types of defects are at a comparable level in both structures and for both implanted ions. Differences between both implantations appear after thermal annealing where the Mn-doped ZnO reveals much better transition metals substitution and recovery effect.
3
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Superconductivity of MgB_2 Layers Prepared on Silicon Substrate by Implantation of Magnesium Ions into Boron Substrate

64%
Trybuła Z., Kempiński W., Łoś S., Kaszyńska K., Trybuła M., Piekoszewski J., Werner Z., Barlak M.
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issue 2
323-325
EN
The results of investigation of the MgB_2 layers prepared on silicon substrate by implantation of Mg ions into boron substrate are presented. After implantation the annealing processes were carried out at temperatures 673 K, 773 K, and 873 K in a furnace in an atmosphere of flowing Ar-4%H_2 gas mixture. The samples were characterized by: four-probe electric conductivity measurements and magnetically modulated microwave absorption. Our results showed that due to silicon substrate the diffusion of implanted Mg ions into boron materials should be limited, and the superconducting phase forms a continuous MgB_2 layer and the resistivity for all samples fall down to zero below T_{c}. The transition temperature T_{c} becomes higher with increasing annealing temperature: T_{c}=18 K (for annealing at T_{A}=673 K), T_{c}=20 K (for annealing at T_{A}=773 K), and T_{c}=27 K (for annealing at T_{A}=873 K).
4
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Ion Implantation and Transient Melting: A New Approach to Formation of Superconducting MgB_2 Phases

64%
Piekoszewski J., Kempiński W., Stankowski J., Prokert F., Richter E., Stanisławski J., Werner Z., Szymczyk W.
Acta Physica Polonica A
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2004
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vol. 106
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issue 6
861-868
EN
An attempt to synthesize superconducting MgB_2 inter-metallic compound from the liquid state is presented. The process consists of two steps. In the first one, boron ions are implanted into a magnesium substrate. In the second one, the near-surface region of such system is melted by short, intense hydrogen plasma pulses without necessity of annealing in Mg vapor. A magnetically modulated microwave absorption method was used to detect superconducting regions in the obtained MgB_2 layer. Percolation between nano-regions (islands) of MgB_2 has not been observed. However, a superconducting state of the insulated islands has been experimentally proven with transition temperatures T_C as high as 31 K.
5
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The Evolution of Superconducting Phase MgB_x

64%
Łoś S., Kempiński W., Piekara-Sady L., Andrzejewski B., Jurga W., Kaszyńska K., Piekoszewski J., Werner Z., Barlak M.
Acta Physica Polonica A
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2008
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vol. 114
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issue 1
179-184
EN
Thin layers of MgB_x were studied in order to define evolution of superconducting phase after Mg ions implantation into boron substrate. Three fluencies of energies 140, 80, and 40 keV were used to establish proper stoichiometry to synthesize homogeneous MgB_2 film. Additionally, the annealing processes were carried out at temperatures 400, 500, and 600°C in a furnace in an atmosphere of flowing Ar-4%H_2 gas mixture. The quality of the superconducting material was examined by magnetically modulated microwave absorption, and magnetic and resistivity measurements. The results showed that T_c becomes higher with increasing annealing temperature. However, the fraction of superconducting phase decreases, due to partial evaporation of Mg ions and their deeper migration into boron substrate.
6
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Formation of Superconducting Regions of MgB_2 by Implantation of Boron Ions into Magnesium Substrate

52%
Trybuła Z., Kempiński W., Andrzejewski B., Piekara-Sady L., Kaszyński J., Piekoszewski J., Werner Z., Richter E., Prokert F., Stanisławski J., Barlak M.
Acta Physica Polonica A
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2005
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vol. 108
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issue 1
165-170
EN
The results of investigation of the MgB_2 inter-metallic compound with the use of boron ions implantation and plasma pulse treatment are presented. The samples were characterized by: four-probe electric conductivity measurements, magnetically modulated microwave absorption, and magnetic measurements. For hydrogen and argon pulsed plasma treatment the samples with T_c ranging from 10 K to 32 K were obtained. The superconducting phase does not form a continuous layer since the resistivity does not fall down to zero. Apparently, separate islands of superconducting phase are connected through metallic Mg paths. All samples are still below the percolation threshold.
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