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Effect of adsorbed Sn on Ge diffusivity on Si(111) surface

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Dolbak A., Olshanetsky B.

Open Physics

2008

vol. 6

issue 3

634-637

The effect of adsorbed Sn as a surfactant on Ge diffusion on a Si(111) surface has been studied by Low Energy Electron Diffraction and Auger Electron Spectroscopy. The experimental dependence of Ge diffusion coefficients on the Si(111) surface versus temperature in the presence of adsorbed Sn atoms has been measured in the range from 300 to 650°C. It has been shown that at a Sn coverage of about 1 monolayer the mobility of Ge atoms increases by several orders of magnitude.

Study of the island morphology at the early stages of Fe/Mo(110) MBE growth

100%

Goykolov D., Kotrla M.

Open Physics

2009

vol. 7

issue 2

220-226

We present theoretical study of morphology of Fe islands grown at Mo(110) surface in submonolayer MBE mode. We utilize atomistic SOS model with bond counting, and interactions of Fe adatom up to third nearest neighbors. We performed KMC simulations for different values of adatom interactions and varying temperatures. We have found that, while for the low temperature islands are fat fractals, for the temperature 500 K islands have faceted rhombic-like shape. For the higher temperature, islands acquire a rounded shape. In order to evaluate qualitatively morphological changes, we measured average aspect ratio of islands. We calculated dependence of the average aspect ratio on the temperature, and on the strength of interactions of an adatom with neighbors.

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2 Open Physics

1 2009

1 2008

1 Dolbak A.

1 Goykolov D.

1 Kotrla M.

1 Olshanetsky B.

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Effect of adsorbed Sn on Ge diffusivity on Si(111) surface

Study of the island morphology at the early stages of Fe/Mo(110) MBE growth