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DLTS Study of Be-Doped p-Type AlGaAs/GaAs MBE Layers

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Szatkowski J., Płaczek-Popko E., Sierański K., Hansen O.
Acta Physica Polonica A
|
1998
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vol. 94
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issue 3
565-569
EN
Deep-level transient spectroscopy method was applied to study deep hole traps in p-type Al_{0.5}Ga_{0.5}As grown on GaAs semi-insulating substrate by MBE. Five hole traps labelled by us as H0 to H4 were found. For the traps H1, H3 and H4 thermal activation energies obtained from Arrhenius plots were equal to: E_{H1}=0.15 eV, E_{H3}=0.4 eV, and E_{H4}=0.46 eV. Hole emission from the trap H2 was electric field dependent with the thermal activation energy extrapolated to zero-field equal to 0.37 eV. Capture cross-sections for the traps H1 and H4 were thermally activated with energetic barriers 0.04 eV (for H1) and 0.18 eV (for H4).
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Deep Levels in Cd_{0.99}Mn_{0.01}Te:Ga

100%
Szatkowski J., Płaczek-Popko E., Sierański K., Bieg B.
Acta Physica Polonica A
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1998
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vol. 94
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issue 3
575-578
EN
Two types of samples were studied. In the material with higher donor concentration four electron traps labelled by us as E1 to E4 were found. For the traps E2 and E3 energies obtained from Arrhenius plots are equal to 0.24 eV and 0.36 eV, respectively. Electric field enhanced electron emission from the levels E1 and E4 was observed and described in terms of Frenkel-Poole mechanism. Capture process from the traps E2 was found to be thermally activated with energetic barriers equal to 0.20 eV for E2.
3
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Electrical Characteristics of Metal/p-type CdTe Schottky Contacts

100%
Szatkowski J., Sierański K., Kasprzak J.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
175-178
EN
The Schottky barrier height of Al, Mg and Ag on chemically prepared p-type surface were measured with I-V techniques. The barrier heights were found to be independent of metal used, and equal to 0.73 ± 0.02 eV.
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