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1
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Tailoring the Internal Evaporator for Effective Ion Beam Production - Volatile vs. Non-Volatile Substances

100%
Turek M., Droździel A., Pyszniak K., Prucnal S.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
939-942
EN
Two different designs of the internal evaporator in an arc discharge ion source are presented, suitable either for volatile, or high-melting point substances. A matter of the evaporator size and placement in order to obtain its appropriate temperature and, therefore, a stable and intense ion beam, is considered. Basic ion source characteristics, i.e. the dependences of ion current and discharge voltage on the discharge and filament currents as well as on the external magnetic field flux density are shown and discussed in order to find optimal working conditions. The results of measurements for both volatile (P, Zn, Se, S) and non-volatile (Pd) are presented, showing the applicability of the design for ion implantation purposes.
2
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Production of Mo^{+} Beams Using an Arc Discharge Ion Source

88%
Turek M., Droździel A., Pyszniak K., Prucnal S., Mączka D.
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vol. 125
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issue 6
1388-1391
EN
A new method of Mo^{+} ion beam production is presented in the paper. The method bases on the chemical sputtering/etching of the molybdenum parts (e.g. anode) of the arc discharge ion source by the chloride containing plasma. A mixture of CCl_4 (or CHCl_3) vapor and air was used as the feeding substance. The separated Mo^{+} beam current of approximately 18 μA was achieved. The measurements of the ion current dependences on the discharge and filament currents as well as on the magnetic field flux density from the electromagnet surrounding the discharge chamber were performed in order to find the optimal working parameters of the ion source.
3
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Fabrication of Si_{1-x}Ge_x Alloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing

88%
Gao K., Prucnal S., Mücklich A., Skorupa W., Zhou S.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
858-861
EN
In our contribution we present the fabrication of Si_{1-x}Ge_x alloy by ion-implantation and millisecond flash lamp annealing. The 100 keV Ge ions at the fluence of 10×10^{16}, 5×10^{16}, and 3×10^{16} cm^{-2} were implanted into monocrystalline (100)-oriented Si wafers covered by 50 nm thermal oxide. In the consequence, the 50 nm amorphous Ge rich Si layers were obtained. The recrystallization of the implanted layers and the Si_{1-x}Ge_x alloying were accomplished by flash lamp annealing with the pulse duration of 20 ms. Flash lamp treatment at high energy densities leads to local melting of the Ge-rich silicon layer. Then the recrystallization takes place due to the millisecond range liquid phase epitaxy. Formation of the high quality monocrystalline Si_{1-x}Ge_x layer was confirmed by the μ-Raman spectroscopy, the Rutherford backscattering channeling and cross-sectional transmission electron microscopy investigation. The μ-Raman spectra reveal three phonon modes located at around 293, 404, and 432 cm^{-1} corresponding to the Ge-Ge, Si-Ge and Si-Si in the Si_{1-x}Ge_x alloy vibrational modes, respectively. Due to much higher carrier mobility in the Si_{1-x}Ge_x layers than in silicon such system can be used for the fabrication of advanced microelectronic devices.
4
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Plasma Ion Source with an Internal Evaporator

88%
Turek M., Droździel A., Pyszniak K., Prucnal S., Mączka D.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
184-187
EN
A new construction of a hollow cathode ion source equipped with an internal evaporator heated by a spiral cathode filament and arc discharge is presented. The source is especially suitable for production of ions from solids. The proximity of arc discharge region and extraction opening enables production of intense ion beams even for very low discharge current (I_{a} = 1.2 A). The currents of 50 μA (Al^{+}) and 70 μA (Bi^{+}) were obtained using the extraction voltage of 25 kV. The source is able to work for several tens of hours without maintenance breaks, giving possibility of high dose implantations. The paper presents the detailed description of the ion source as well as its experimental characteristics like dependences of extracted currents and anode voltage on anode and cathode currents.
5
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Solar Cell Emitters Fabricated by Flash Lamp Millisecond Annealing

76%
Prucnal S., Shumann T., Skorupa W., Abendroth B., Krockert K., Möller H.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
30-34
EN
Phosphorus ion implantation was used for the emitter formation in mono- and multicrystalline silicon solar cells. After ion implantation the silicon is strongly disordered or amorphous within the ion range. Therefore subsequent annealing is required to remove the implantation damage and activate the doping element. Flash-lamp annealing offers here an alternative route for the emitter formation at overall low thermal budget. During flash-lamp annealing, only the wafer surface is heated homogeneously to very high temperatures at ms time scales, resulting in annealing of the implantation damage and electrical activation of phosphorus. However, variation of the pulse time also allows to modify the degree of annealing of the bulk region to some extent as well, which can have an influence on the gettering behaviour of metallic bulk impurities. The μ-Raman spectroscopy showed that the silicon surface is amorphous after ion implantation. It could be demonstrated that flash-lamp annealing at 800°C for 20 ms even without preheating is sufficient to recrystallize implanted silicon. The highest carrier concentration and efficiency as well as the lowest resistivity were obtained after annealing at 1200°C for 20 ms both for mono- and multicrystalline silicon wafers. Photoluminescence results point towards P-cluster formation at high annealing temperatures which affects metal impurity gettering within the emitter.
6
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III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing

64%
Prucnal S., Turek M., Gao K., Zhou S., Pyszniak K., Droździel A., Żuk J., Skorupa W.
Acta Physica Polonica A
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2013
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vol. 123
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issue 5
935-938
EN
Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in SiO_2 and Si_3N_4 made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
7
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Production of Molybdenum and Tantalum Ion Beams using CCl₂F₂

64%
Turek M., Droździel A., Pyszniak K., Filiks J., Prucnal S., Mączka D., Vaganov Y., Węgierek P.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
283-287
EN
A new method of refractory metal (like Mo and Ta) ion beam production using the arc discharge ion source and CCl₂F₂ (dichlorodifluoromethane) used as a feeding gas supported into the discharge chamber is presented. It is based on etching of the refractory metal parts (e.g. anode or a dedicated tube) Cl and F containing plasma. The results of measurements of the dependences of ion currents on the working parameters like discharge and filament currents as well as on the magnetic field flux density of an external electromagnet coil are shown and discussed. The separated Mo⁺ and Ta⁺ beam currents of approximately 22 μA and 2 μA, respectively, were obtained.
8
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Modification of Optical and Electrical Properties of PET Foils by He⁺, Ne⁺ and Ar⁺ Implantation

64%
Droździel A., Turek M., Pyszniak K., Prucnal S., Luchowski R., Grudziński W., Klimek-Turek A., Partyka J.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
264-269
EN
Thin (3 μm) polyethylene terephthalate (PET) foils were irradiated with 135 keV He⁺, Ne⁺ and Ar⁺ ions with the fluences up to 5×10¹⁵ cm¯². Changes of chemical structure of the polymer were studied with the Fourier transform infrared and Raman spectroscopy - breaking of numerous chemical bonds, polymer chain cross-linking as well as formation of sp² hybridised carbon clusters and cluster networks were demonstrated. The increase of the implanted sample absorbance with the implantation fluence in the UV-VIS spectra as well as the decrease of optical band-gap energy (2.75 and 2.0 eV for He and Ne, respectively, at 5×10¹⁵ cm¯²) are observed. Decrease of bulk resistance of heavily treated samples by ≈5 orders of magnitude is determined. Measurements of the sheet resistance confirm that the sample becomes conducting also on the reverse (unimplanted) side of the foil. Both of these effects depend on the impinging ion mass - they are the strongest for Ar. The increase of both ac conductance and dielectric constant is observed in the frequency range up to 2 MHz and these changes rise with the impinging ion mass.
9
Content available remote

Influence of Hot Implantation on Residual Radiation Damage in Silicon Carbide

64%
Rawski M., Żuk J., Kulik M., Droździel A., Lin L., Prucnal S., Pyszniak K., Turek M.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
192-195
EN
Remarkable thermomechanical and electrical properties of silicon carbide (SiC) make this material very attractive for high-temperature, high-power, and high-frequency applications. Because of very low values of diffusion coefficient of most impurities in SiC, ion implantation is the best method to selectively introduce dopants over well-defined depths in SiC. Aluminium is commonly used for creating p-type regions in SiC. However, post-implantation radiation damage, which strongly deteriorates required electric properties of the implanted layers, is difficult to anneal even at high temperatures because of remaining residual damage. Therefore implantation at elevated target temperatures (hot implantation) is nowadays an accepted method to decrease the level of the residual radiation damage by avoiding ion beam-induced amorphization. The main objective of this study is to compare the results of the Rutherford backscattering spectroscopy with channeling and micro-Raman spectroscopy investigations of room temperature and 500°C Al^{+} ion implantation-induced damage in 6H-SiC and its removal by high temperature (up to 1600°C) thermal annealing.
10
Content available remote

Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer

52%
Prucnal S., Jiao F., Reichel D., Zhao K., Cornelius S., Turek M., Pyszniak K., Drozdziel A., Skorupa W., Helm M., Zhou S.
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vol. 125
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issue 6
1404-1408
EN
Copper indium gallium diselenide (CIGS) becomes more significant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the final efficiency of the solar cell. An influence of the post-deposition millisecond range flash lamp annealing on the optical and microstructural properties of the CIGS films was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that flash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after flash lamp annealing the degradation of the photoluminescence is significantly suppressed and the absolute absorption in the wavelength range of 200-1200 nm increases by 25%.
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