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1
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Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN

100%
Borysiewicz M., Kamińska E., Piotrowska A., Pasternak I., Jakieła R., Dynowska E.
Acta Physica Polonica A
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2008
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vol. 114
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issue 5
1061-1066
EN
Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².
2
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Planar Optical Waveguides Based on Thin ZnO Layers

84%
Struk P., Pustelny T., Gut K., Gołaszewska K., Kamińska E., Ekielski M., Pasternak I., Łusakowska E., Piotrowska A.
Acta Physica Polonica A
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2009
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vol. 116
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issue 3
414-418
EN
The paper quotes the results of investigations concerning planar optical waveguides with a high value of the refractive index, achieved basing on a broad-band gap semiconductor ZnO, deposited on glass or quartz substrates. The investigations were focused on the properties of the waveguides, determining the modal characteristics, the attenuation coefficient and the structure of the surface.
3
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Optical and Electrical Studies of Graphene Deposited on GaN Nanowires

84%
Kierdaszuk J., Kaźmierczak P., Drabińska A., Wysmołek A., Korona K., Kamińska M., Pakuła K., Pasternak I., Krajewska A., Żytkiewicz Z.
Acta Physica Polonica A
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2014
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vol. 126
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issue 5
1087-1089
EN
In this paper using scanning electron microscope, contactless microwave electronic transport and the Raman spectroscopy we studied the properties of graphene deposited on GaN nanowires and compared it with the graphene deposited on GaN epilayer. The Raman micro-mapping showed that nanowires locally change the strain and the concentration of carriers in graphene. Additionally we observed that nanowires increase the intensity of the Raman spectra by more than one order of magnitude.
4
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Electronic Properties of Thin HfO_2 Films Fabricated by Atomic Layer Deposition on 4H-SiC

84%
Taube A., Gierałtowska S., Gutt T., Małachowski T., Pasternak I., Wojciechowski T., Rzodkiewicz W., Sawicki M., Piotrowska A.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
696-698
EN
Applicability of thin HfO_2 films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10^{12} eV^{-1} cm^{-2}) on HfO_2/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.
5
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ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering

84%
Borysiewicz M., Pasternak I., Dynowska E., Jakieła R., Kolkovski V., Dużyńska A., Kamińska E., Piotrowska A.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
686-688
EN
ZnO (0001) layers on sapphire (0001) substrates were fabricated by means of high temperature high vacuum magnetron sputtering. The layers were deposited onto a thin MgO buffer and a low temperature ZnO nucleation layer, which is a technology commonly used in MBE ZnO growth. This paper reports on using this technology in the sputtering regime.
6
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The sensibility of resistance sensor structures with graphene to the action of selected gaseous media

69%
Opilski Z., Stolarczyk A., Pustelny T., Urbańczyk M., Setkiewicz M., Drewniak S., Maciak E., Procek M., Gut K., Pasternak I., Strupinski W.
Bulletin of the Polish Academy of Sciences: Technical Sciences
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2013
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issue 2
7
Content available remote

Ultrathin NbN Films for Superconducting Single-Photon Detectors

69%
Słysz W., Guziewicz M., Borysiewicz M., Domagała J., Pasternak I., Hejduk K., Rzodkiewicz W., Ratajczak J., Bar J., Węgrzecki M., Grabiec P., Grodecki R., Węgrzecka I., Sobolewski R.
Acta Physica Polonica A
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2011
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vol. 120
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issue 1
200-203
EN
We present our research on fabrication and structural and transport characterization of ultrathin superconducting NbN layers deposited on both single-crystal Al_2O_3 and Si wafers, and SiO_2 and Si_3N_4 buffer layers grown directly on Si wafers. The thicknesses of our films varied from 6 nm to 50 nm and they were grown using reactive RF magnetron sputtering on substrates maintained at the temperature 850°C. We have performed extensive morphology characterization of our films using the X-ray diffraction method and atomic force microscopy, and related the results to the type of the substrate used for the film deposition. Our transport measurements showed that even the thinnest, 6 nm thick NbN films had the superconducting critical temperature of 10-12 K, which was increased to 14 K for thicker films.
8
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Morphology and Selected Properties of Core/Shell ZnTe-Based Nanowire Structures Containing ZnO

69%
Gas K., Janik E., Zaleszczyk W., Pasternak I., Dynowska E., Fronc K., Kolkovsky V., Kret S., Morhange J., Reszka A., Wiater M., Caliebe W., Karczewski G., Kowalski B., Szuszkiewicz W., Wojtowicz T.
Acta Physica Polonica A
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2011
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vol. 119
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issue 5
612-614
EN
We report on an approach to fabricate ZnTe-based core/shell radial heterostructures containing ZnO, as well as on some of their physical properties. The molecular beam epitaxy grown ZnTe nanowires constituted the core of the investigated structures and the ZnO shells were obtained by thermal oxidation of ZnTe NWs. The influence of the parameters characterizing the oxidation process on selected properties of core/shell NWs were examined. Scanning electron microscopy revealed changes of the NWs morphology for various conditions of the oxidation process. X-ray diffraction, high resolution transmission electron microscopy, and Raman scattering measurements were applied to reveal the presence of ZnTe single crystal core and polycrystalline ZnO-shell of investigated structure.
9
Content available remote

The Influence of Humidity on the Resistance Structures with Graphene Sensor Layer

69%
Pustelny T., Setkiewicz M., Drewniak S., Maciak E., Stolarczyk A., Procek M., Urbańczyk M., Gut K., Opilski Z., Pasternak I., Strupinski W.
Acta Physica Polonica A
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2012
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vol. 122
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issue 5
870-873
EN
In the paper the results of investigations are presented concerning the influence of humidity of air on the resistance of a gas sensor structure with a graphene layer. The affects of nitrogen dioxide and humidity action on graphene were studied. We indicated that humidity might play an important role in determining the gas sensing properties of the graphene layer. In the paper it has been shown that in the case of a nitrogen oxide sensor, the reaction of NO_2 with water vapour can generate permanent defects in graphene.
10
Content available remote

Planar Optical Waveguides for Application in Optoelectronic Gas Sensors

69%
Golaszewska K., Kamińska E., Pustelny T., Struk P., Piotrowski T., Piotrowska A., Ekielski M., Kruszka R., Wzorek M., Borysiewicz M., Pasternak I., Gut K.
Acta Physica Polonica A
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2008
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vol. 114
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issue 6A
A-223-A-230
EN
In the paper, the results of technological investigations on planar optical waveguides based on high band gap oxide semiconductors were presented. Investigations concerned the technologies of depositing very thin layers of: zinc oxide ZnO, titanium dioxide TiO_2 and tin dioxide SnO_2 on substrates of quartz glass plates. There were investigated both morphological structures of the produced layers and their optical properties. The paper also presents investigations on the technology of input-output light systems in the Bragg grating structures.
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