Structural, optical and electrical properties of Zn-doped CuInS_2 thin films grown by double source thermal evaporation method were studied. Evaporated thin films were grown from CuInS_2 powder by vacuum evaporation using resistively heated tungsten boats. The element Zn was evaporated from a thermal evaporation source. The amount of the Zn source was determined to be 0-4% molecular weight compared with CuInS_2 source. The effects of Zn on films properties were investigated using X-ray diffraction, optical transmission and reflection spectra. The films were annealed in vacuum at 260°C for 2 h. The Zn-doped samples have band-gap energy of 1.474-1.589 eV. We found that the Zn-doped CuInS_2 thin films exhibit p-type conductivity and we predict that Zn species can be considered as suitable candidates for use as doped acceptors to fabricate CuInS_2-based solar cells.
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