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Graphenes Bonding Forces in Graphite

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EN
Graphenes bonding forces in graphite are widely known as an example of the van der Waals forces. Well-known experimental facts relative to graphite negate this. A comparison of physical properties of graphite and molecular crystals and metals is shown. A model of dominant weak metallic bonding forces between graphenes is proposed. Brief theoretical background to the model is given.
EN
Thin polycrystalline diamond films were deposited on prepared (100) Si substrate by hot filament chemical vapor deposition using a mixture of hydrogen, propane-butane and argon. During investigations the gas flow of argon was varied from 100 sccm to 400 sccm. Scanning electron microscopy analysis revealed that the addition of argon to the gas phase influenced the growth rate and film structure. An increase of argon concentration provokes an increase in film porosity and decrease in crystalline facetting. The quality of these films was investigated with the use of the Raman spectroscopy.
EN
Polycrystalline diamond films were deposited by electron assisted hot filament chemical vapor deposition method on (001) Si substrate using a mixture of propane-butane and hydrogen as working gas. In morphology investigation of diamond films using scanning electron microscope, it was found that diamond film morphology is changing from (111), for hydrocarbon concentration below 0.5 vol.%, via (100) to the so-called "ball-like" structure. The diamond film quality and defect structures in it were investigated by Raman and electron spin resonance spectroscopy for the purpose of obtaining basic knowledge which will aid the growth of defect free epitaxial diamond film for electronic and optical applications.
EN
We found that β-irradiated samples of crystallite graphite and multi-walled carbon nanotubes emit light during heating above room temperature. This behaviour is rather surprising for semimetals. Due to the lack of deep enough energy gap, this optical emission cannot be associated with interband transitions, as it is usually assumed in a thermally stimulated luminescence model. We suppose that the reported accumulated luminescence is the result of thermally stimulated relaxation of some kind of defects created in graphene structures by ionising radiation and therefore we offer to name it the relaxoluminescence. We anticipate the relaxoluminescence to be a starting point for developing a new spectroscopic method for nanotechnology. It can also throw a new light on the nature of defects, which are suspected of being responsible for strange magnetic effects in carbon.
EN
A study of the Raman scattering in Zn_{1-x}Mg_{x}Se (0 ≤ x ≤ 0.4) epilayers grown by molecular beam epitaxy on (100) GaAs and (111)_{Zn} ZnTe substrates has been performed. Two kinds of longitudinal optical phonon modes (LO_{Zn-Se} and LO_{Mg-Se}) were observed under excitation of the Ar^{+} and Kr^{+} laser lines at room temperature, whose frequencies and intensities depend characteristically on the Mg content.
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