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1
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Surface Related Electronic States on CdTe(110) Observed by Means of Optical Spectroscopy

100%
Kowalski B. J., Orłowski B. A., Cricenti A.
Acta Physica Polonica A
|
1995
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vol. 88
|
issue 5
1005-1009
EN
Surface differential reflectivity together with photoemission and Auger electron spectroscopies have been applied to observe and identify optical transitions among surface related states on CdTe(110) surfaces. The strongest contributions to the band of optical transitions have been revealed at the photon energies of 2.8, 3.4, and 3.9 eV. Their correspondence to excitations from the occupied S1 band to the unoccupied U1 one at the Γ, Χ and Χ' points of the surface Brillouin zone is discussed.
2
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Bulk Band Structure of CdTe along the Γ-L Direction

100%
Orłowski B. A., Janik E., Janowitz C., Manzke R.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
303-306
EN
The valence band structure E(k) for CdTe (111) Cd side surface 2 x 2 reconstructed was investigated along the Γ-L direction of the bulk Brillouin zone by high-resolution angle-resolved photoemission spectroscopy method in the energy range between 9.5 eV and 30.0 eV. The E(k) dependence was determined as well for bulk as for some of the surface states in the whole width of the valence band. Obtained results are compared with available calculated bulk band structure along Γ-L direction.
3
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Reflectivity Study of Hg_{1-x}Co_{x}Se Crystals

100%
Guziewicz E., Kowalski B. J., Orłowski B. A., Szuszkiewicz W.
Acta Physica Polonica A
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1994
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vol. 86
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issue 5
875-878
EN
The reflectivity spectra of Hg_{1-x}Co_{x}Se (x = 0.0, 0.024, 0.031) crystals were measured in the vacuum ultraviolet photon energy range from 4 to 12 eV to find the influence of Co ions on the valence band electronic structure of the HgSe crystal. The structure of the reflectivity spectra was interpreted in terms of the electronic band structure of the binary material (HgSe) assuming direct allowed interband transitions.
4
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Fe 3d Contribution to the Valence Band of Cubic Hg_{1-x}Fe_{x}S - Resonant Photoemission Study

88%
Kowalski B. J., Orłowski B. A., Szuszkiewicz W., Witkowska B., Johnson R. L.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
791-794
EN
Resonant photoemission spectra of cubic Ηg_{0.94}Fe_{0.06}S were measured for photon energies near to the energy of intra atomic Fe 3p^{6}3d^{6} → 3p^{5}3d^{7} transition. The difference between the spectra taken at resonance and an­tiresonance is presented as a measure of the energy distribution of Fe 3d derived states. The results obtained show that Fe 3d states contribute to the whole valence band with a distinct structure appearing at the band edge.
5
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Gd 4f and 5d Electrons in Sn_{0.96}Gd_{0.04}Te Valence Band

88%
Orłowski B. A., Kowalski B. J., Gołacki Z., Story T., Johnson R. L.
Acta Physica Polonica A
|
1995
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vol. 88
|
issue 5
857-860
EN
The synchrotron radiation was applied to measure resonant photoemission spectra (Fano-type Gd 4d-4f resonance), constant initial states and constant final states to study the valence band electronic structure of Sn_{0.96}Gd_{0.04}Te crystal. The resonant energy was found equal to 150.3 eV. The electrons 4f were found to contribute to the valence band of the crystal with the maximum located at 9.5 eV below the valence band edge whereas 5d electrons contribute at the crystal valence band edge.
6
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4f Shell of Gd^{2+} and Gd^{3+} Ions in Sn_{1-x}Gd_{x}Te - Resonant Photoemission Study

88%
Kowalski B. J., Gołacki Z., Guziewicz E., Orłowski B. A., Johnson R. L.
Acta Physica Polonica A
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1997
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vol. 92
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issue 5
875-878
EN
Resonant photoemission spectra of Sn_{1-x}Gd_{x}Te (x=0.02 and 0.08) measured for the photon energy range 142 to 151 eV show the valence band density of states distribution and the Gd 4f derived maximum. The energy position of the J=0 component of the Gd 4f maximum was determined and used as a measure of the Gd 4f shell binding energy. The electrostatic model of core level shifts was used to interpret the difference in the Gd 4f binding energies observed for x=0.02 and x=0.08.
7
Content available remote

Valence Band Electronic Structure of HgMSe (M=Mn, Fe, Co)

88%
Guziewicz A., Kowalski B. J., Orłowski B. A., Ghijsen J., Johnson R.
Acta Physica Polonica A
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1994
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vol. 86
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issue 5
817-823
EN
The synchrotron radiation in the energy range between 40 and 80 eV was applied to investigate the electronic structure of Hg_{0.7}Mn_{0.3}Se, Hg_{0.88}Fe_{0.12}Se and Hg_{0.93}Co_{0.07}Se crystals by means of the resonant photoemission spectroscopy. The set of energy distribution curves was measured in the region near the M (M = Mn 3d^{5}, Fe 3d^{6}, Co 3d^{7}) 3p-3d transitions. In order to determine thoroughly the Fano type resonance energy the constant initial states curves were measured.
8
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Resonant Photoemission Study of Sn_{0.96}Gd_{0.04}Te

76%
Orlowski N., Janowitz C., Müller A., Manzke R., Kowalski B. J., Orłowski B. A.
Acta Physica Polonica A
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1997
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vol. 91
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issue 5
847-850
EN
Sn_{0.96}Gd_{0.04}Te has been studied by means of the resonant photoemission spectroscopy in the constant final states, constant initial states and energy distribution curves modes. In the constant final states spectrum of the well-known giant resonance at the 4d-4f threshold around 150 eV we were able to resolve a peak of the multiplet structure that has not previously been found. Spectra were also taken at the 4p-5d threshold around 280 eV revealing a double structure with antiresonating behaviour.
9
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Cd_{1-x}Fe_{x}Te Ternary Crystal Formation Studied by Resonant Photoemission

76%
Guziewicz E., Kowalski B. J., Gołacki Z., Orłowski B. A., Johnson R. L., Masek J.
Acta Physica Polonica A
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1997
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vol. 92
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issue 4
793-796
EN
A resonant photoemission was used to study the ternary crystal formation, when small amount of Fe atoms was deposited (in one monolayer range of thickness) on the clean CdTe(100) surface. The constant initial state spectra taken near the Fe 3p-3d transition after Fe deposition and then again after heating process show the existence of two Fano-like resonance. The differences of the energy distribution curves taken for both resonance and antiresonance, respectively, allow us to distinguish two kind of Fe 3d contributions to the valence band: one derived from the metallic Fe islands on the surface and the second - derived from the Fe atoms built into the Cd_{1-x}Fe_{x}Te crystal.
10
Content available remote

Resonant Photoemission Study of Gd 4f States in IV-VI Crystals

76%
Kowalski B. J., Gołacki Z., Guziewicz E., Orłowski B. A., Ghijsen J., Johnson R. L.
Acta Physica Polonica A
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1997
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vol. 91
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issue 4
819-823
EN
Resonant photoemission experiments were performed in order to reveal the contributions of half-filled Gd 4f^{7} shell to the electronic structures of Sn_{0.95}Gd_{0.05}Te and Pb_{0.95}Gd_{0.05}S crystals. The influences of the Gd 4f^{6} final-state multiplet splitting and f-ligand hybridization on the shapes of the spectra are discussed.
11
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Cr 3d Surface and Bulk States in Sn_{1-x}Cr_{x}Te/Cr Crystals

76%
Guziewicz E., Szamota-Sadowska K., Kowalski B. J., Grodzicka E., Story T., Orłowski B. A., Johnson R. L.
Acta Physica Polonica A
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1997
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vol. 91
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issue 4
783-787
EN
We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn_{0.97}Cr_{0.03} Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn_{0.97}Cr_{0.03} Te/Cr interface formation process. At the clean Sn_{0.97}Cr_{0.03}Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed.
12
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Resonant Photoemission Spectra of Zn_{1-x}Co_{x}S Valence Band

76%
Kowalski B. J., Gołacki Z., Guziewicz A., Orłowski B. A., Mašek J., Ghijsen J., Johnson R.
|
EN
We report the results of a resonant photoemission study of Zn_{1-x}Co_{x}S. A Co 3d derived contribution to the valence band spectra was revealed as a 5 eV wide structure with two maxima: at the edge of the valence band and about 4 eV below the edge. The results were compared with the total DOS distribution resulting from tight binding-coherent potential approximation calculations.
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