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Carrier Collection into InGaAs/GaAs Quantum Well: Role of Surface Band Bending

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Ambrazevičius G., Marcinkevičius S., Lideikis T., Naudžius K.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 4
660-663
EN
Photoluminescence and photoluminescence excitation spectra of InGaAs/GaAs quantum wells located at different distances from a surface have been studied at 2 K. The influence of surface band bending on carrier transfer into a quantum well is demonstrated. Oscillations due to relaxation of photo-excited carriers in GaAs barrier have been observed in the quantum well photoluminescence excitation spectra.
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