Search results

Sort By:

Limit search:

Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy

100%

Mizerov A., Jmerik V., Kaibyshev V., Komissarova T., Masalov S., Sitnikova A., Ivanov S.

The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al₂O₃ substrates. Growth kinetics under different growth conditions (substrate temperature, Ga to activated nitrogen flux ratio, etc.) during deposition of GaN(0001) and GaN(0001̅) both by the ammonia-based MBE or plasma-assisted MBE was studied. It was found that atomically smooth surface of 1 μm thick GaN(0001̅) films can be achieved by plasma-assisted MBE at the relatively high substrate temperature T_S ≈ 760°C and Ga to activated nitrogen flux ratio F_Ga/F_N* ≈ 1.8.

Refine search results

1 Acta Physica Polonica A

1 2008

1 Ivanov S.

1 Jmerik V.

1 Kaibyshev V.

1 Komissarova T.

1 Masalov S.

1 Mizerov A.

1 Sitnikova A.

Search results

Growth Control of N-Polar GaN in Plasma-Assisted Molecular Beam Epitaxy