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Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface

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Sadeghzadeh M., Mironov O., Emeleus C., Parry C., Phillips P., Parker E., Whall T.

Acta Physica Polonica A

1998

vol. 94

issue 3

503-508

We have studied the transport properties of a two-dimensional hole gas (2DHG) at the inverted interface of a strained Si_{0.8}Ge_{0.2} quantum well. By application of a bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n_{s} can be controlled, in the range of (1.5-5.2)×10^{11} cm^{-2}. At a temperature T=0.33 K, the Hall mobility is 4650 cm^{2} V^{-1} s^{-1} at the maximum carrier density. For lower sheet densities (n_{s}<2×10^{11} cm^{-2}) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Haas oscillation measurements we have extracted the hole effective masses m*=(0.25 → 0.28)m_{0} and the ratio of transport to quantum lifetimes α=(0.92 → 0.85) for the corresponding carrier density change of n_{s}=(5.2 → 2.5)×10^{11} cm^{-2}. These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n_{s}, short range interface charge and interface roughness scattering.

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1 Acta Physica Polonica A

1 1998

1 Emeleus C.

1 Mironov O.

1 Parker E.

1 Parry C.

1 Phillips P.

1 Sadeghzadeh M.

1 Whall T.

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Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface