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Structural properties of transparent Ti-V oxide semiconductor thin films

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Sieradzka K., Kaczmarek D., Morgiel J., Domaradzki J., Prociow E., Adamiak B.
Open Physics
|
2013
|
vol. 11
|
issue 2
251-257
EN
Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO2-V2O3-V2O5 mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO2 phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 105 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties.
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