The Rutherford backscattering angular scattering yields for 100 keV H^+ and H^0 projectiles from Si crystal was measured. The analysis of results using Monte Carlo simulations leads to the conclusion that H^0 beam suffers smaller dispersion than H^+ beam, when crossing crystal surface. It means that the H^0 scattering probability is smaller at large impact parameters. For greater penetration depth the channeling process turns out to be the same.
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