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Photoelectromagnetic Investigations of Graphene

52%
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vol. 126
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issue 5
1104-1106
EN
The photoelectromagnetic investigations of graphene has been performed using noncontact technique. The dependence of photoelectromagnetic response on magnetic field induction, illumination intensity for different photon energies, and frequency of illumination chopping is presented. We anticipate our paper to be a starting point for investigations of carrier diffusion length in this material. Such investigations should be essential for development of graphene electronic and optoelectronic devices.
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vol. 126
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issue 5
1125-1127
EN
Methodology of impedance measurements and ferroelectric hysteresis loops observed in temperature range 292-475 K for antimony sulfoiodide (SbSI) grown from vapour phase are discussed. Temperature dependences of spontaneous polarization and coercive field of SbSI crystals are presented.
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52%
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vol. 126
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issue 5
1093-1095
EN
Different optical energy gaps in ferroelectric and paraelectric phases as well as light scattering on domain walls allow to observe ferroelectric domains in antimony sulfoiodide (SbSI) near the Curie temperature. Mobility 8.11(44)× 10^{-8} m^2/(Vs) of ferroelectric domain walls under external electric field has been determined along c-axis of SbSI single crystals using optical transmittance microscopy.
EN
Mechanical alloying was used to synthesize LaNi_5-type hydrogen storage materials. X-ray diffraction analysis showed that, after 30 h milling, the starting mixture of the elements was decomposed into an amorphous phase. Following the annealing in high purity argon at 700°C for 0.5 h, X-ray diffraction confirmed the formation of the CaCu_5-type structures. The nanocrystalline materials were used as negative electrodes for a Ni-MH_x battery. A partial substitution o Ni by Al or Mn in LaNi_{5-x}M_x alloy leads to an increase in discharge capacity. On the other hand, the alloying elements such as Al, Mn and Co greatly improved the cycle life of LaNi_5 material. For example, in the nanocrystalline LaNi_{3.75}Mn_{0.75}Al_{0.25}Co_{0.25} powder, discharge capacities of up to 258 mA h g^{-1} (at 40 mA g^{-1} discharge current) were measured. The band structure ab initio calculations showed that 3g sites are preferred by Al, Co, and Mn atoms in the unit cell.
EN
The SbSI/Sb_2S_3 single heterostructures as well as Sb_2S_3/SbSI/Sb_2S_3 and SbSI/Sb_2S_3/SbSI double heterostructures have been produced by applying CO_2 laser treatment of p-type SbSI single crystals. The current-voltage and transient characteristics of these heterostructures have been measured in temperatures below and above the SbSI single crystal Curie temperature (T_{c} = 293 K). The results have been fitted with appropriate theoretical formulae to determine the following types of the investigated heterojunctions: P-p SbSI/Sb_2S_3, p-P-p Sb_2S_3/SbSI/Sb_2S_3 and P-p-P SbSI/Sb_2S_3/SbSI. Influence of the illumination on electrical properties of SbSI/Sb_2S_3 single and double heterostructures has been reported. Fabricated new structures may be potentially applicable in electronics and optoelectronics as a new type of metal-ferroelectric-semiconductor devices.
EN
This paper presents for the first time temperature dependences of optical energy gaps of SbSI@CNT and SbSeI@CNT, i.e. carbon nanotubes (CNTs) filled with antimony sulfoiodide (SbSI) and antimony selenoiodide (SbSeI). The heterostructures were prepared sonochemically using CNTs and elemental Sb, S or Se and I in the presence of solvent under ultrasonic irradiation. Spectral characteristics of diffusive transmittance and reflectance of SbSI@CNT and SbSeI@CNT were measured in temperature range 274 K < T < 333 K. The determinal temperature dependence of indirect forbidden optical energy gap of SbSI@CNT has been fitted with E_{gIf} (T) = (1.92(2)-3.6(6) × 10^{-4} × T) eV. Indirect allowed optical energy gap of SbSeI@CNT has been fitted with E_{gIa} (T) = (1.817(5)-7.1(2) × 10^{-4} × T) eV.
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