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Molecular Beam Epitaxy of Al_{x}Ga_{1-x}Sb and Al_{x}Ga_{1-x}As: New Donor Doping Sources

100%
Dobaczewski L., Missous M., Singer K., Żytkiewicz Z.
Acta Physica Polonica A
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1993
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vol. 84
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issue 4
826-828
EN
The first results obtained with the use of Ga_{2}S_{3} and Ga_{2}Se_{3} compounds as sources of donor elements for molecular beam epitaxy of Al_{x}Ga_{1-x}Sb (0 ≤ x ≤ 1) and Al_{x}Ga_{1-x}As (0 ≤ x ≤ 0.4) are reported. In GaAs free electron concentrations obtained when incorporating the donors from these sources can be easily controlled in the range of three orders of magnitude. For Al_{x}Ga_{1-x}Sb it was possible to compensate the high concentration of native acceptors and to obtain n-type of conductivity.
2
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Inelastic Electron Scattering in Double-Barrier Resonant Tunneling Structure Revealed with Photoexcitation

88%
Figielski T., Mąkosa A., Wosiński T., Harness P., Singer K.
Acta Physica Polonica A
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1993
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vol. 84
|
issue 4
817-819
EN
We investigated current-voltage and photocurrent-voltage characteristics of a double-barrier resonant tunneling structure based on AlGaAs. To explain the observed "double-step" feature of the characteristics, we have proposed a mechanism including a multiple phonon emission of an electron dwelling in the quantum well.
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