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Mobility Spectrum Analysis of the Electrical Conduction

100%
Dziuba Z.
Acta Physica Polonica A
|
1991
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vol. 80
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issue 6
827-839
EN
The electrical conductivity tensor components σ_{xx}(H) and σ_{xy}(H) have been transformed into mobility spectrum. The resolution of the mobility spectrum has been discussed. As an example the electrical conduction in HgTe and HgCdTe samples have been analyzed using resistivity tensor components, conductivity tensor components and using the mobility spectrum.
2
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Growth Processes of ZnTe Epilayers Deposited by MBE on GaAs(100) Vicinal Surfaces - Studies by Static and Dynamic RHEED

51%
Sadowski J., Dziuba Z., Iierman M. A.
Acta Physica Polonica A
|
1995
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vol. 87
|
issue 1
225-228
EN
Static and dynamic reflection high energy electron diffraction (RHEED) has been applied for studying the initial growth processes of ZnTe crystallized by molecular beam epitaxy (MBE) on vicinal surfaces of GaAs(100) sub­strates. Atomically smooth ZnTe epilayers have been grown by MBE when in situ thermal desorption of the substrate protecting oxide layer was per­formed in the ultra high vacuum environment of the vacuum growth chamber just before the growth of ZnTe started. By gradual increasing of the substrate temperature of the crystallized ZnTe epilayers from 300°C to 420°C, when recording the RHEED intensity oscillations at these and eleven intermittent temperatures, it has been shown that the transition from the 2D-nucleation growth mechanism to the step-flow growth mechanism of ZnTe occurs at 410°C. Measuring periods of RHEED intensity oscillations recorded during the MBE growth processes it has been demonstrated that the growth rate of ZnTe at constant fluxes of the constituent elements decreases with increasing temperature from 0.37 ML/s at 300°C to 0.22 ML/s at 400°C.
3
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X-Ray and Electron-Optical Characterization of ZnTe/CdTe and ZnTe/GaAs Epitaxial Layers Obtained by the MBE Method

45%
Auleytner J., Dziuba Z., Górecka J., Pełka J., Regiński K.
Acta Physica Polonica A
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1994
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vol. 86
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issue 4
567-574
EN
X-ray diffraction topography (Bragg diffraction) and X-ray rocking curve measurements were used to study the perfection and structural properties of ZnTe epitaxial layers on the CdTe and GaAs substrates. ZnTe epitaxial layers on CdTe were grown by MBE method by using a machine made in the Institute of Physics of the Polish Academy of Sciences. The ZnTe layers on GaAs were produced on the other, factory-made MBE system. The comparison between the X-ray topographical images of the substrate and epitaxial layer shows that imperfections on the substrate surface cause imperfections in the epitaxial layer. The results of double-crystal diffractometry measurements show that the perfection of the layer on the GaAs substrate is higher than that on the CdTe. The presence of microtwining in the ZnTe layer on the CdTe substrate was confirmed by RHEED measurements. The X-ray standing wave fluorescent spectra were also measured for the samples.
4
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Anomalous Behavior of the Hall Effect in III-V Heterostructures

45%
Dziuba Z., Górska M., Marczewski J., Przesławski T., Regiński K.
Acta Physica Polonica A
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2000
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vol. 97
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issue 2
331-336
EN
The Hall effect and magnetoresistance were measured in the InAs/GaAs heterostructure at temperatures from 300 K down to 3 K, in a magnetic field range from 0.01 to 1.5 T. The anomalous magnetic field dependence of the Hall coefficient in the InAs/GaAs heterostructure in magnetic fields below 0.1 T was explained as due to an extraordinary Hall effect caused by skew scattering on dislocations.
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