The hydrogen ion beam induced luminescence of gadolinium oxide Gd_2O_3 doped with 1% of holmium (Ho) and 1% of bismuth (Bi) was investigated. Degradation of the holmium related 549 nm ion beam induced luminescence line intensity during hydrogen ion irradiation was observed. Two different mechanisms of the ion beam induced luminescence degradation has been proposed: the first one related to the accumulation of ion induced target material damage and the second mechanism related to the target temperature growth during ion beam bombardment. The experimental method for separation of both mechanisms effects was proposed and demonstrated.
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