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Self-Compensation Mechanism in Semi-Insulating CdMnTe Crystals Intended for X/γ-Ray Detectors

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Yurtsenyuk N., Kosyachenko L., Sklyarchuk V., Maslyanchuk O., Sklyarchuk O., Grushko E.
Acta Physica Polonica A
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2011
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vol. 120
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issue 5
957-959
EN
The electrical properties of single Cd_{1 - x}Mn_{x}Te (x= 0.07 - 0.39) crystals with a resistivity of ≈ 10^8 Ω cm at 300 K have been studied. The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes. The energy of ionization and the degree of compensation levels have been found.
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