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Effect of Hydrostatic Pressure on Photoluminescence Spectra from Structures with Si Nanocrystals Fabricated in SiO_2 Matrix

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Zhuravlev K., Tyschenko I., Vandyshev E., Bulytova N., Misiuk A., Rebohle L., Skorupa W.

Acta Physica Polonica A

2002

vol. 102

issue 2

337-344

The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO_2 films was studied. A "blue"-shift of PL spectrum from the SiO_2 films implanted with Si^+ ions to total dose of 1.2×10^{17} cm^{-2} with an increase in hydrostatic pressure was observed. For the films implanted with Si^+ ions to a total dose of 4.8×10^{16} cm^{-2} high temperature annealing under high hydrostatic pressure (12 kbar) causes a "red"-shift of photoluminescence spectrum. The "red" photoluminescence bands are attributed to Si nanocrystals while the "blue" ones are related to Si nanocrystals of reduced size or chains of silicon atoms or ≡Si-Si≡ defects. A decrease in size of Si nanocluster size occurs in result of the pressure-induced decrease in the diffusion of silicon atoms.

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1 Acta Physica Polonica A

1 2002

1 Bulytova N.

1 Misiuk A.

1 Rebohle L.

1 Skorupa W.

1 Tyschenko I.

1 Vandyshev E.

1 Zhuravlev K.

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Effect of Hydrostatic Pressure on Photoluminescence Spectra from Structures with Si Nanocrystals Fabricated in SiO_2 Matrix