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1
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Interface Energy Spectrum of Real PbTe/SnTe Heterojunction

100%
Litvinov V., Oszwałdowski M.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 5
805-808
EN
The interface energy spectrum in real band-inverted PbTe/SnTe heterojunctions formed both in the (111) and (001) planes is calculated. It is shown that even if the valence band of SnTe lies above the conduction band minimum of PbTe, the interface, midgap states may still exist due to the strain effect on the band gaps.
2
Content available remote

Indirect Exchange in Band-Inverted Heterojunctions of IV-VI Semimagnetic Compounds

81%
Dugaev V., Litvinov V., Oszwałdowski M.
Acta Physica Polonica A
|
1993
|
vol. 84
|
issue 4
709-712
EN
The interaction of spins localized within the band-inverted heterojunction with the Weyl excitations is shown to differ significantly from the usual s-d interaction. The indirect exchange interaction is long-range and anti-ferromagnetic. The magnitude of interaction decreases with the distance as R^{-3}. The effective interaction depends on the parameters of electron energy spectrum and parameters of the heterojunction as well. It consists of anisotropic Heisenberg term and of pseudodipole terms.
3
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Deformation Potentials in IV-VI Quantum Wells

81%
Litvinov V., Dugaev V., Oszwałdowski M.
Acta Physica Polonica A
|
1995
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vol. 87
|
issue 2
345-348
EN
Theoretical studies of the deformation potentials in quantum wells and superlattices are presented. It is shown that a difference exists between the bulk deformation potentials and deformation potentials in the low dimen­sional structures made of narrow-gap semiconductors.
4
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Interaction Between Magnetic Layers in Structures with Narrow-Gap IV-VI Semiconductors

81%
Dugaev V., Litvinov V., Dobrowolski W., Story T.
Acta Physica Polonica A
|
2000
|
vol. 97
|
issue 3
455-458
EN
The results of calculation of the indirect exchange interaction between magnetic layers are presented for the case of a structure with narrow-gap semiconducting IV-VI quantum well. The main mechanism is a magnetic polarization of the size-quantized electrons and holes inside the well. This type of interaction is suggested for the explanation of recent experiments on EuS/PbS structures.
5
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Energy Spectrum in Quantum Dots of Lead and Tin Chalcogenides Semiconducting Compounds

61%
Dugaev V., Litvinov V., Petrov P., Mironov O., Nashchekina O., Oszwałdowski M.
Acta Physica Polonica A
|
1992
|
vol. 82
|
issue 5
797-800
EN
The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calculations of the energy levels as functions of the dot radius are performed. When the anisotropy of the bare energy spectrum is strong, the energy levels are calculated using Fal'kovskii's adiabatic approximation for multiband systems. When the quantum dot material has an inverted band gap with respect to the host, the low-energy states within the fundamental gap are shown to arise.
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