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EN
The voltage, V, dependences of the differential tunnel conductance G(V) were calculated for two kinds of junctions involving normal and superconducting charge-density-wave metals (CDWMs) in the external magnetic field H. The first is a non-symmetrical junction with a CDWM electrode being biased with respect to a ferromagnet. Calculations show that the paramagnetic splitting occurs between spin-up and spin-down components of G(V), similar to what is observed when a superconducting electrode is used instead of the CDWM one. The second setup is symmetric (CDWM-I-CDWM), where I denotes an insulator. If at least one of the CDWM electrodes is normal and H≢0, G(V) will also be spin-split.
EN
Differential conductance G as a function of the bias voltage V was measured for break-junctions of superconducting Bi_2Sr_2CaCu_2O_{8+δ} and YBa_2Cu_3O_{7-δ}. The dependences G(V) for both materials clearly demonstrate the so-called dip-hump structures outside the gap region. A theory, which suggests the charge-density-wave origin of the dip-hump structures and explains its specific form by intrinsic inhomogeneity of cuprate materials, was developed. The well-known pseudogap features in the tunnel spectra of high-T_c oxides found both below and above the superconducting critical temperature are also described by the theory, which testifies that both the pseudogap and the dip-hump structures have the same origin. Competing theories and various G(V) peculiarities found for a number of superconducting oxides are briefly discussed.
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