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In Situ Raman Spectroscopy of Solution-Gated Graphene on Copper

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Binder J., Stępniewski R., Strupiński W., Wysmołek A.
Acta Physica Polonica A
|
2017
|
vol. 132
|
issue 2
360-363
EN
We present a solution-gated in situ Raman spectroscopy approach, which enables the electrical characterization of graphene on a copper substrate without the need of a transfer process. The application of a voltage across the solution resulted in a shift of the Raman G-band without a significant shift of the 2D band. This observation allowed for the separation of the effects of strain and doping. Based on the G and 2D band shifts we show that we can manipulate the n-type carrier concentration of graphene directly on the copper substrate in a range from about 8× 10¹² cm¯² to about 1.5× 10¹³ cm¯².
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